Other

Enthone Incorporated

Enthone-omi, Inc.

Paul R Gerst

John William Gerst

Paul Vernon Gerst

Vincent Paneccasio, Jr

Richard W Hurtubise

Patricia A Cacciatore

Elena H Too

Keith L Ferroni

An improved joint member, e.g., a gusset, is provided and is formed from a fiber-reinforced pultruded material. The improved gusset is more lightweight and inexpensive to manufacture than conventional gussets. Furthermore, the fiber-reinforced material is strong enough to provide the structural support needed in most platform-type systems.

Gusset

There is provided a dock having a pair of primary frame members and a pair of secondary frame members. A plurality of cross members extends between the pair of primary frame members. The dock includes a plurality of cross member connectors for connecting the cross members to the primary frame members. Each cross member connector includes a frame contact portion and a cross member engagement portion extending from the frame contact portion. The frame contact portion is connected to a respective one of the plurality of primary frame members. The cross member engagement portion defines a channel sized and configured to receive the alignment plate of a respective one of the plurality of cross members. A roller assembly may also be included for stabilizing the dock relative to an adjacent piling.

Dock system

There is provided a dock having a pair of primary frame members and a pair of secondary frame members. The primary and secondary frame members are formed of a fiber-reinforced resin material. The primary frame members extend parallel to a primary axis and are arranged in opposed, spaced parallel relation to each other. Likewise, the secondary frame members extend parallel to a secondary axis and are arranged in opposed, spaced parallel relation to each other. Each secondary frame member is connected to the pair of primary frame members. The dock also includes a plurality of cross members. Each cross member is connected to and extends between the pair of primary frame members. Each cross member includes an upper platform contact face disposed within a common upper platform contact plane.

A copper electroplating bath and a method to plate substrates with the bath are provided. The bath and method are particularly effective to plate electronic components such as semiconductive wafer VLSI and ULSI interconnects with void-free fill copper plating for circuitry forming vias and trenches and other small features less than 0.2 microns with high aspect ratios. The copper bath contains a bath soluble organic divalent sulfur compound, and a bath soluble polyether compound such as a block copolymer of polyoxyethylene and polyoxypropylene, a polyoxyethylene or polyoxypropylene derivative of a polyhydric alcohol and a mixed polyoxyethylene and polyoxypropylene derivative of a polyhydric alcohol. A preferred polyether compound is a mixed polyoxyethylene and polyoxypropylene derivative of glycerine. A preferred copper bath also contains a pyridine compound derivative.

Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect

A method is provided for zincating aluminum substrates for metal plating thereon wherein the plated aluminum product has smoothness, dimensional integrity and increased production yield of the plated products. The substrates also have enhanced paramagnetic thermal stability of ENP coatings used on memory disk products. A zincate bath contains as additives Fe.sup.+3 and NaNO.sub.3, and a chelator to chelate the iron, with a preferred iron chelator being Rochelle Salt and with the amount of Fe.sup.+3 being controlled at a preferred concentration of 0.2 to 0.3 g/l. A preferred zincating method employs an etchant composition comprising HNO.sub.3, H.sub.2 S0.sub.4 and H.sub.3 PO.sub.4 to etch the aluminum substrate prior to zincating. Use of this etchant composition, either alone or with the zincate bath of the invention, is particularly effective for aluminum substrates which have been ground to a smoothness of less than 100 .ANG.. The etchant is non-aggressive and removes metal oxides formed by the grinding and annealing process to form the aluminum substrates used to fabricate the memory disks. The etchant also preserves the dimensional integrity of the substrate and prepares the surface for zincate deposition. It is highly preferred to use the etchant and zincate bath of the invention in the same metal plating process to provide an enhanced process and metal plated product. The etchant or zincating bath may also be used alone in other plating processes requiring these type substrate treatments.

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Newport Beach, CA, United States of America

Paul R Gerst