Semiconductor Components Industries, LLC

Paul Perez

Hui Tian

Hirofumi Komori

Xianmin Yi

Xia Zhao

Wei Gao

An image sensor having pixel circuitry operable in multiple gain modes is provided. The pixel circuitry may include first and second floating diffusion (FD) regions, a first photodiode coupled to the first FD region via a first transfer gate, a second photodiode coupled to the first FD region via a second transfer gate, a third photodiode coupled to the second FD region via a third transfer gate, and a fourth photodiode coupled to the second FD region via a fourth transfer gate. The first FD region may be coupled to the second FD region via first and second control transistors. The control transistors may be connected to a shared reset transistor. During readout, both control transistors may be deactivated to provide a high gain mode, only one transistor may be activated to provide an intermediate gain mode, or both control transistors may be activated to provide a low gain mode.

Triple conversion gain image sensor pixels

A photodiodes may be formed on a substrate such as an imager substrate. The photodiode may include first and second layers in the substrate that form a p-n junction. The first layer may have a first doping type such as p-type doping, whereas the second layer may have a second, opposite doping type such as n-type doping. A counter-doping implant region may be provided that only partially overlaps with the second layer of the photodiode. The counter-doping implant region may have an opposite doping type to the second layer and may have a dopant concentration that is less than the dopant concentration of the second layer. The counter-doping implant region may extend into a third layer of the substrate that may have the same doping type of the second layer but at a lower concentration than the counter-doping implant region.

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Boise, ID, United States of America

Paul Perez