Eastman-kodak Company

Itt Manufacturing Enterprises, Inc.

Paul P Lee

Robert Michael Guidash

Teh-Hsuang Lee

Eric Gordon Stevens

Ronald S Cok

Kenneth R Gardner

Fred Yacoby

Lawrence J Bernstein

J Daniel Newman

Andre Dominic Cropper

Rulon Eugene Simmons

Eric J Knappenberger

Sandals with two snap fasteners

An imaging system includes a camera having a lens and a focal planar array (FPA) for capturing at least one image frame having a plurality of sub-image frames. Each sub-image frame includes multiple pixel values corresponding to photonic intensities of the captured image frame. An embedded atomic clock (EAC) is integrated in one single unit with the camera for providing time code data. A multiplexer combines the multiple pixel values of one sub-image frame with the time code data, and an input/output module provides both, the time code data and the multiple pixel values of the sub-image frame as an output data stream.

Mosaic image collector including an embedded atomic clock

A data acquisition system includes multiple terminal nodes. Each terminal node includes a sensor, an atomic clock and a controller. Each sensor is adapted to sense an external event and transform the external event into an electrical signal. Each atomic clock generates a time reference. Each controller is coupled to the atomic clock and the sensor, and is configured to merge the electrical signal with the time reference and provide a time-stamped data stream to a remote central processor. The remote central processor is configured to organize a respective time-stamped data stream from one terminal node with another respective time-stamped data stream from another terminal node.

Sensor synchronization using embedded atomic clocks

Apparatus and methods for detecting and analyzing spectral polarimetric images are disclosed. Spectral polarimetric images are detected by selecting spectral bands of light within light received from a light source and capturing polarimetric images of the selected spectral bands of light. Spectral polarimetric images are analyzed by converting spectral polarimetric images to Stokes images and selecting two or more of the Stokes images for analysis.

Spectral polarimetric image detection and analysis methods and apparatus

A pixel design for CMOS image sensors that has a high frame rate potential and, therefore, provides motion capture capabilities. The pixel is designed for global electronic shuttering so every pixel is exposed simultaneously to images incident upon the pixel array plane. The present invention has the advantages of: (1) Allowing the accommodation of changes in the pixel output groupings for different monochrome output format or CFA patterns with only changes in metal routing layers; (2) allowing true electronic shuttering to image moving scene with all the pixels having the same capture time windows; and (3) providing a symmetric global shutter gate and transfer gate to minimize pixel related fixed pattern noise. The pixel architecture provides for a CMOS based, active pixel image sensor comprising an array of pixels formed in rows and columns, with each of the pixels containing at least one active circuit element. There are a plurality of output channels formed such that each of the output channels are operatively connected to a subset of pixels wherein each of the pixel have an attribute that is the same. The pixel architecture also provides an output gate region and a shutter gate region that are symmetric about the center of the pixel. By arranging the shutter and transfer gates, a symmetric manner about the center of the pixel, a more efficient transfer of electrons to these gates is provided. A Pixel Output Bus structure allows configurable connections to column-wise signal busses that provide parallel output channels.

Image sensor pixel for global electronic shuttering

An image display includes an addressable image display pixel, having a substrate; a light emitter formed on the substrate; a photo-sensor formed on the substrate and optically coupled to the light emitter to detect light emitted by the light emitter to generate a feedback voltage signal in response to light emitted by the light emitter; and, a feedback readout circuit formed on the substrate and responsive to the feedback voltage signal to provide a feedback signal representing the light output of the light emitter, the feedback readout circuit including a transistor amplifier, means for resetting the readout circuit, and a select switch.

Flat-panel light emitting pixel with luminance feedback

An image sensor device comprising a silicon substrate having a plurality of CMOS circuit formed thereon, including a pixel array having a plurality of rows and a plurality of columns, a row addressing circuit operatively connected to each the pixel array and the timing control circuit, the row addressing circuit having a row bus that provides address lines to each row in the pixel array, a column addressing circuit, a pixel timing circuit, a timing control logic block, a signal processing circuit, and an interface circuit coupled to external computational means for provision of address and control signals to the sensor device, the interface circuit being operatively coupled the timing control logic, the pixel timing circuit, the row addressing circuit and the column addressing circuit.

Integrated CMOS active pixel digital camera

An active pixel sensor formed by creating an X-Y array of pixels on a semiconductor substrate. The two dimensional array of pixels is arranged in a plurality of rows and columns that are addressed by addressing circuits formed on the substrate. The active pixel sensor is functionally divided to enable the addressing and reading out of a plurality of pixels simultaneously by providing areas, each of the areas having a row addressing circuit and a column addressing circuit. A signal processing circuit is provided for each area to output a sequential series of pixels in each of the areas. A correlated double sampling circuit is provided

Parallel output architectures for CMOS active pixel sensors

This present invention illustrates that alternating bright and dark pixels wherein the periods of bright and dark are varied by changing the consecutive number of pixels that are bright and dark. Accordingly, the present invention provides a technique and architectural design to achieve efficient testing of the multiple parallel output column circuits integrated with an X-Y addressable image sensor by using on-chip signals. This invention is particularly useful in testing high-speed output column CDS circuits for a high frame rate image sensor fabricated using a Complementary Metal Oxide Semiconductor (CMOS) active pixel sensor (APS) technology incorporating a pinned photo-diode. The technique allow testing of the frequency response of the output column circuits by observing of the output signals either in analog form or digital bits if an on-chip ADC is used without applying any external input signals.

Built-in self test signals for column output circuits in X-Y addressable image sensor

The optimization of two technologies (CMOS and CCD) wherein a pinned photodiode is integrated into the image sensing element of an active pixel sensor. Pinned photodiodes are fabricated with CCD process steps into the active pixel architecture. Charge integrated within the active pixel pinned photodiode is transferred into the charge sensing node by a transfer gate. The floating diffusion is coupled CMOS circuitry that can provide the addressing capabilities of individual pixels. Alternatively, a buried channel photocapacitor can be used in place of the pinned photodiode.

Active pixel sensor integrated with a pinned photodiode

A display device, including: a light controlling element; a drive circuit connected to the light controlling element, the drive circuit including a transistor having a gate for controlling the power applied to the light controlling element; a storage capacitor connected to the gate of the drive circuit transistor; a control circuit for depositing charge on the storage capacitor; a refresh circuit connected to the control circuit and responsive to an external signal for causing the control circuit to deposit charge on the storage capacitor; and a feedback mechanism including element for measuring a change in a performance characteristic of the display device and for signaling the refresh circuit in response to the measured characteristic, whereby the display is refreshed on demand as opposed to periodically.

Solid state emissive display with on-demand refresh

An active pixel sensor architecture comprising a semiconductor substrate having a plurality of pixels formed, thereon, incorporating microlens and lightshields into the pixel architecture. Each of the pixels further comprising: a photodetector region upon which incident light will form photoelectrons to be collected as a signal charge; a device for transferring the signal charge from the photodetector region to a charge storage region that is covered by a light shield; a sense node that is an input to an amplifier; the sense node being operatively connected to the signal storage region. The pixel architecture facilitates symmetrical design of pixels which allows for incorporation of light shield and microlens technology into the design.

Color active pixel sensor with electronic shuttering, anti-blooming and low cross talk

A pixelated image sensor having comprising a partially pinned photodiode which is formed a semiconductor of a first conductivity type formed on a surface of the sensor with at least one photodiode formed, within the semiconductor near the surface, the photodiode being formed from a second conductivity type opposite the first conductivity type; a pinning layer formed on the surface over at least a portion of the photodiode creating a pinned photodiode region, the pinning layer being formed from the first conductivity type; and an unpinned region formed near the surface in an area outside the portion used to form the pinning layer, the unpinned region is formed as a floating region that is employed as a capacitor. The partially pinned photodiode is useful in expanding the fill factor of photodetectors employing photodiode technology.

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Pittsford, NY, United States of America

Paul P Lee