Snaptrack Incorporated

Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Epcos Ag

Ecole Polytechnique Federale De Lausanne

General Electric Technology Gmbh

Polight As

Paul Muralt

Gilles Moulard

Ramin Matloub

Thomas Skotnicki

Stephane Monfray

Pascal Ancey

Thomas Metzger

Hanspeter Zinn

Skandar Basrour

John Phair

Emilie Trioux

Evgeny Milyutin

Vladimir Pashchenko

Bert Willing

A sensor device () comprises a piezoelectric transducer () and a base member (). The piezoelectric transducer includes a piezoelectric member with at least one excitation electrode () connected to a first face thereof and having a thickness (h) between the first face and a second face. The piezoelectric transducer () is attached to a supporting face of the base member () with the second face of the piezoelectric transducer positioned adjacent the supporting face of the base member. The base member includes at least one acoustic wave reflecting tag () distant from the piezoelectric member.

Interrogatable passive acoustic sensor device with reflective tags

A method of manufacturing bistable strips having different curvatures, each strip including a plurality of portion of layers of materials, wherein at least one specific layer portion is deposited by a plasma spraying method in conditions different for each of the strips.

Method of manufacturing bistable strips having different curvatures

A MEMS component includes a lower electrode. The MEMS component also includes an upper electrode. The upper electrode overlies the lower electrode. The MEMS component also includes a first piezoelectric layer between the lower electrode and the upper electrode. The first piezoelectric layer has a first piezoelectric material comprising AlN and Sc.

MEMS component having AlN and Sc and method for manufacturing a MEMS component

A BAW component is provided. A method for manufacturing a BAW component is also provided. The component includes a bottom electrode, a top electrode and a first piezoelectric material. The first piezoelectric material is between the bottom electrode and the top electrode. The first piezoelectric material has a higher piezoelectric coefficient than AlN.

BAW component and method for manufacturing a BAW component

The present invention comprises a system and a method thereof for identifying a specific Interdigitated Electrode pattern arrangement for piezoelectric actuators located around an aperture of a flexible lens body, wherein the Interdigitated Electrode configuration is configurable, when activated, to provide a specific definable bending force distribution, thereby providing a specific definable shaping of the flexible lens body, thereby providing specific definable optical characteristics of the flexible lens body.

Method for optimizing a piezoelectric actuator structure for a deformable lens

An acoustic wave resonator device comprising a resonant layer that comprises a series of side-by-side areas of first and second dielectric materials. In one embodiment the first dielectric material is a piezoelectric, in particular the first dielectric material can be a piezoelectric and the second dielectric material can be non-piezoelectric. In another embodiment, the first dielectric material is a piezoelectric of first polarity and the second dielectric material is a piezoelectric of opposite polarity or different polarity. Where needed, the resonant layer is supported on a reflector composed of series of layers of high acoustic impedance material(s) alternating with layers of low acoustic impedance material(s). For example, the reflector comprises AlN, AlO, Ta2O5, HfO2 or W as high impedance material and SiO2 as low impedance material.

Piezoelectric resonator operating in thickness shear mode

Method for manufacturing a plurality of pyroelectric sensors by forming a thin pyroelectric film or layer on one face of a silicon wafer or substrate, wherein electric polarization of this film is provided between lower and upper electrodes defining pixels forming these sensors. In order to protect the wafer in the event of a short-circuit between two electrodes of a pixel, resistors are arranged in series with the lower or upper electrodes by connecting these electrodes to each other by subsets in order to carry out the electric polarization. Once this polarization has been carried out, the electric connections connecting the upper or lower electrodes are removed to allow each pixel to supply an elementary electric signal when the sensor is operating. In order to minimize the risk of short-circuits and in order to reduce the stray capacity of the electrodes, the upper and lower electrodes of the pixels are structured. In the case of intersections of the connecting paths in projection onto the general plane of the wafer, these intersections are preferably provided between the electrodes and the respective resistors.

Method for making pyroelectric sensors comprising a thin pyroelectric film requiring an electric polarization

Growing community of inventors

La Sarraz, Switzerland

Paul Muralt