Interuniversitair Microelektronica Centrum (imec)

Imec

Imec Vzw

Other

Interuniversitair Micorelektronica Centrum (imec, Vzw)

Air Products and Chemicals, Inc.

Goldfinger Technologies, LLC

Dainippon Screen Mfg. Co., Ltd.

Katholieke Universiteit Leuven, Ku Leuven R&d

Akrion Technologies, Inc.

Screen Holdings Co., Ltd.

Paul Mertens

Marc Marcel Heyns

Marc A Meuris

Mark Meuris

Rita Vos

Steven Brems

Jeffrey M Lauerhaas

Oliver Doll

Bernd Kolbesen

Albrecht Fester

William Fyen

Thomas J Nicolosi, Jr

Wim Fyen

Lee M Loewenstein

Mario E Bran

Hessel Sprey

Tom Schram

Sandip Halder

Dirk Maarten Knotter

Yi Wu

Raoul Standt

Marc Schaekers

Guy Vereecke

Masayuki Wada

Ivo Teerlinck

Leonardus Leunissen

Frank Holsteyns

Stefan DeGendt

Chad M Hosack

Paul Patel

Marc Hauptmann

Harald Okorn Schmidt

Martien Johanna Baeyens

Elisabeth Camerotto

Michael McGeary

Karine Kenis

Geert Doumen

Antoine Pacco

Sylvain Garaud

This present application relates to a system for delivering megasonic energy to a liquid, involving one or more megasonic transducers, each transducer having a single operating frequency within an ultrasound bandwidth and comprising two or more groups of piezoelectric elements arranged in one or more rows, and a megasonic generator means for driving the one or more transducers at frequencies within the bandwidth, the generator means being adapted for changing the voltage applied to each group of piezoelectric elements so as to achieve substantially the same maximum acoustic pressure for each group of piezoelectric elements. The generator means and transducers being constructed and arranged so as to produce ultrasound within the liquid. Such a system may be part of an apparatus for cleaning a surface of an article such as a semiconductor wafer or a medical implant.

System for delivering ultrasonic energy to a liquid and use for cleaning of solid parts

The present invention is related to a method and apparatus for cleaning a substrate, in particular a semiconductor substrate such as a silicon wafer. The substrate is placed in a tank containing a cleaning liquid, at an angle with respect to acoustic waves produced in said liquid. The angle corresponds to the angle of transmission, i.e. the angle at which waves are not reflected off the substrate surface. A damping material is provided in the tank, arranged to absorb substantially all waves thus transmitted through the substrate. A significant improvement in terms of cleaning efficiency is obtained by the method of the invention.

Method and apparatus for cleaning semiconductor substrates

A substrate treating method comprising a step of preparing a semiconductor substrate (W,) which has an oxide film () containing at least one of a rare earth oxide and an alkaline earth oxide, at least a portion of the oxide film () being exposed, and a rinse step of supplying the oxide film () on the semiconductor substrate (W,) with a rinse liquid made of an alkaline chemical or an organic solvent. Preferably, the alkaline chemical is an alkaline aqueous solution having a pH of more than 7. Further, preferably, the organic solvent is a high concentration organic solvent having a concentration of substantially 100%.

Substrate treating method and method of manufacturing semiconductor device using the same

Methods and apparatuses for cleaning a surface of a substrate are presented. The method comprises positioning a substrate at a controllable distance from a piezoelectric transducer, supplying a cleaning liquid between the substrate and the transducer, applying an oscillating acoustic force to the cleaning liquid by actuating the transducer, and moving the transducer relative to the substrate. The method further comprises, while moving the transducer relative to the substrate, measuring a value that indicates a distance between a surface of the substrate and the transducer, comparing the measured value to a desired value, and adjusting the distance between the surface and the transducer so that the measured value is maintained substantially equal to the desired value. The measured value may be the distance between the surface of the substrate and the transducer or a phase shift between an alternating current and voltage applied to the transducer.

Method and apparatus for controlling optimal operation of acoustic cleaning

A method for depositing a coating layer on at least a part of a surface of a substrate is described. The method includes supplying a coating substance to at least part of a surface of a substrate. The substrate is subjected to a relative movement with respect to a source of the coating substance. The surface tension of the coating substance is modified, at least locally, at least part of the time while the at least part of the substrate is subjected to the movement. A thickness of the coating layer is influenced by modifying the surface tension of the coating substance.

Method for coating substrates

A method and apparatus for removing a first liquid from a surface of a substrate is provided. A second liquid is supplied to at least part of a surface of a substrate having a rotary movement. The rotary movement has a center of rotation and an edge of rotation. The second liquid is directed from the center of rotation to the edge of rotation using a nozzle. A dry zone is created on the substrate as the position of the spray moves from the center of rotation to the edge of rotation. As a result, the first liquid and the second liquid are removed from the surface of the substrate.

Method and apparatus for removing a liquid from a surface of a substrate

The present invention recites a composition comprising a first compound and a second compound. The first compound has the chemical formula ( 1a), wherein m, n and o are independently from each other equal to 2 or 3; wherein p is equal to 1 or 2; R being a chemical group with the chemical formula (1a'), wherein q is equal to 1, 2 or 3; wherein R, Rand Rare independently selected from the group consisting of hydrogen and an organic group. The second compound has the chemical formula (1c). Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate. 

Semiconductor cleaning solution

A method and apparatus for immersion lithography is described. The method includes positioning a semiconductor substrate under an optical immersion head assembly, providing an immersion liquid between the substrate and the optical immersion head assembly, and supplying a tensio-active gaseous substance along the perimeter of the contact area of the immersion liquid and the substrate. The immersion liquid contacts at least an area of the substrate. The tensio-active gaseous substance is chosen such that, when at least partially mixed with the immersion liquid, the mixture has a lower surface tension than the immersion liquid, thereby creating a surface tension gradient pulling the immersion liquid from the perimeter towards an inside portion of the contact area.

Method and apparatus for immersion lithography

The present invention is related to a composition comprising an oxidizing compound and a complexing compound with the chemical formula wherein R1, R2, R3 and R4 are selected from the group consisting of H and any organic side chain. The oxidizing compound can be in the form of an aqueous solution. The complexing compound is for complexing metal ions. Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate 

Composition comprising an oxidizing and complexing compound

An apparatus for drying a generally flat substrate that has been cleaned has a rotatable support for supporting the substrate, a substrate drying assembly, and a controller. The substrate drying assembly includes a substrate drying assembly support arm, an outlet for applying liquid to an upper surface of the substrate, and an outlet for applying a drying vapor to the upper surface of the substrate. The substrate drying assembly is configured to position the liquid applying outlet and to position the vapor applying outlet above a portion of the substrate. The controller causes the substrate drying assembly to be retracted over the upper surface of the substrate at a faster rate near a center of the substrate than near a periphery of the substrate.

Megasonic cleaner and dryer

An apparatus includes a rotatable chuck for supporting a substrate and a splash guard. The splash guard surrounds the chuck and surrounds a substrate mounted on the chuck. The splash guard has a portion that deflects fluid being flung off the substrate by centrifugal action in a manner so as to not splash back onto the substrate. The splash guard is moveable between a process position in which the upper annular edge of the splash guard extends above the chuck and a substrate on the chuck, and a load/unload position in which the splash guard is tilted so that one side of the upper annular edge is below an upper edge of the chuck. The movement of the splash guard facilitates loading and unloading of a substrate.

Megasonic cleaner and dryer system

The present invention is related to a method and apparatus for liquid treating and drying a substrate, such as a semiconductor wafer, the method comprising the step of immersing a substrate or a batch of substrates in a tank filled with a liquid, and removing the substrate(s) through an opening so that a flow of the liquid takes place through the opening during removal of the substrate. Simultaneously with the removal, a reduction of the surface tension of the liquid is caused to take place near the intersection line between the liquid and the substrate. For acquiring such a tensio-active effect, a uniform flow of a gas or vapor is used, or/and a local application of heat. The invention is equally related to an apparatus for performing the method of the invention.

Method and apparatus for liquid-treating and drying a substrate

The invention is related to a method of plating of a metal layer on a substrate. The method is particularly preferred for the formation of metallization structures for integrated circuits.

Multi-step method for metal deposition

A method and apparatus for dispensing a liquid on the surface of a localized zone of a substrate, for example for cleaning of etching purposes. Along with the liquid, a gaseous tensio-active substance is supplied, which is miscible with said liquid and when mixed with the liquid, reduces the surface tension of said liquid, thus containing the liquid in a local zone of the substrate surface.

Method and apparatus for localized liquid treatment of the surface of a substrate

A method and an apparatus for removing a liquid, i.e. a wet processing liquid, from at least one surface of at least one substrate is disclosed. A liquid is supplied on a surface of substrate. Simultaneously or thereafter the liquid or the substrate is locally heated to thereby reduce the surface tension of said liquid. By doing so, at least locally a sharply defined liquid-ambient boundary is created. According to the invention, the substrate is subjected to a rotary movement at a speed to guide said liquid-ambient boundary over the surface of the substrate thereby removing said liquid from said surface.

Method and apparatus for removing a liquid from a surface

Growing community of inventors

Bonheiden, Belgium

Paul Mertens