Applied Materials, Inc.

Paul Matthews

Yung-Cheng Lu

David Wingto Cheung

Wai-Fan Yau

Farhad K Moghadam

Dian Sugiarto

Tzu-Fang Huang

Ralf B Willecke

Ju-Hyung Lee

Nasreen Gazala Chopra

Kuo-Wei Liu

A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.

Method of depositing low dielectric constant carbon doped silicon oxide

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San Jose, CA, United States of America

Paul Matthews