Sandia Corporation

California Institute of Technology

Paul M Smith

James G Fleming

Roland Madar

Claude Bernard

Ronald V Jones

Jonathan S Custer

Elizabeth Lynn Roherty-Osmun

Marc-A Nicolet

Douglas Ray Adkins

Chris P Tigges

Mark Reece

Charles V Robino

Michael Joseph Rightley

James J Mulhall

A parallel-plate heat pipe is disclosed that utilizes a plurality of evaporator regions at locations where heat sources (e.g. semiconductor chips) are to be provided. A plurality of curvilinear capillary grooves are formed on one or both major inner surfaces of the heat pipe to provide an independent flow of a liquid working fluid to the evaporator regions to optimize heat removal from different-size heat sources and to mitigate the possibility of heat-source shadowing. The parallel-plate heat pipe has applications for heat removal from high-density microelectronics and laptop computers.

Parallel-plate heat pipe apparatus having a shaped wick structure

The present invention relates to the forming of amorphous or near-amorphous, ternary films of W-Si-N on substrates by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. The present invention method will allow the conformal forming of amorphous or near-amorphous, ternary films of W-Si-N on patterned non-planar substrates at temperatures at or below about 450.degree. C., by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. A typical temperature range for the formation of the films is between 473.degree. K. and 773.degree. K., while the reactor pressure can be varied between 0.1 to 50 Torr. The composition of the deposited films is adjusted by varying the flow ratios of the reactive gases.

Synthesis of W-Si-N films by chemical vapor deposition using WF.sub.6,

A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

Chemical vapor deposition of W-Si-N and W-B-N

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Albuquerque, NM, United States of America

Paul M Smith