USA As Represented by Secretary of the Navy

Paul M Campbell

F Keith Perkins

Adam L Friedman

Aubrey T Hanbicki

James C Culbertson

Berend T Jonker

John Bradley Boos

Brian R Bennett

Eric S Snow

Glenn Jernigan

Richard Magno

Enrique Cobas

Jamie P Novak

Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

2H to 1T phase based transition metal dichalcogenide sensor for optical and electronic detection of strong electron donor chemical vapors

A method of making a low dimensional material chemical vapor sensor comprising providing a monolayer of a transition metal dichalcogenide, applying the monolayer to a substrate, applying a PMMA film, defining trenches, and placing the device in a n-butyl lithium (nbl) bath. A low dimensional material chemical vapor sensor comprising a monolayer of a transition metal dichalcogenide, the monolayer applied to a substrate, a region or regions of the transition metal dichalcogenide that have been treated with n-butyl lithium, the region or regions of the transition metal dichalcogenide that have been treated with n-butyl lithium have transitioned from a semiconducting to metallic phase, metal contacts on the region or regions of the transition metal dichalcogenide that have been treated with the n-butyl lithium.

2H/1T phase contact engineering for high performance transition metal dichalcogenide chemical vapor sensors

A method of making a low-dimensional material chemical vapor sensor comprising exfoliating MoS, applying the monolayer flakes of MoSonto a SiO/Si wafer, applying a methylmethacrylate (MMA)/polymethylmethacrylate (PMMA) film, defining trenches for the deposition of metal contacts, and depositing one of Ti/Au, Au, and Pt in the trench and resulting in a MoSsensor. A low-dimensional material chemical vapor sensor comprising monolayer flakes of MoS, trenches in the SiO/Si wafer, metal contacts in the trenches, and thereby resulting in a MoSsensor. A full spectrum sensing suite comprising similarly fabricated parallel sensors made from a variety of low-dimensional materials including graphene, carbon nanotubes, MoS, BN, and the family of transition metal dichalcogenides. The sensing suites are small, robust, sensitive, low-power, inexpensive, and fast in their response to chemical vapor analytes.

Low-dimensional material chemical vapor sensors

This invention pertains to heterojunction bipolar transistors containing a semiconductor substrate, a buffer layer of an antimony-based material deposited on the substrate, a sub-collector layer of an antimony-based material deposited on the buffer layer, a collector layer of an antimony-based material deposited on the sub-collector layer, a base layer of an antimony-based material deposited on the collector layer, an emitter layer of an antimony-based material deposited on the base layer, and a cap layer of an antimony-based material deposited on the emitter layer.

InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors

An electronic device having an interconnected network of carbon nanotubes on the surface of a substrate, and two or more electrical leads. The network forms an electrical connection between the leads.

Growing community of inventors

Alexandria, VA, United States of America

Paul M Campbell