Eastman-kodak Company

Paul L Roselle

Stephen L Kosman

Eric Gordon Stevens

Gustavo R Paz-Pujalt

Ronald Myron Wexler

David L Losee

Ronald M Gluck

Lydia L Rivaud

Patricia A Mahns

An insitu image reversal process which uses a sacrificial coating of indium tin oxide and simultaneously deposits amorphous carbon in openings patterned in the ITO while removing the deposited ITO to expose the underlying coating, thereby completing image reversal.

Low temperature insitu image reversal process for microelectric

A method of making a two-phase charge coupled device (CCD) includes forming a layer of a conductive material over and insulated from the surface of a body of a semiconductor material of one conductivity type having a channel region of the opposite conductivity type in the body and extending to the surface. Sections of a first masking layer are formed on the conductive material layer spaced along the channel region. A conductivity modifying dopant is implanted into the channel region through the spaces between the sections of the first masking layer. A layer of a second masking layer is formed over the sections of the first masking layer and on the surface of the conductive material layer in the spaces between the sections of the first masking layer. A layer of indium-tin oxide (ITO) is formed over the portions of the second masking layer which extend across the ends of the sections of the first masking layer, and a layer of carbon is formed on the second masking layer between the ITO layers. The ITO layers along the ends of the sections of the first masking layer are then removed, and exposed portions of the second masking layer are removed. The portions of the conductive material layer under the removed portions of the second masking layer are then removed so as to leave the conductive material layer divided into individual very closely spaced apart (submicron spacing) gate electrodes.

Method of making two-phase charge coupled device

The use of a deposited silicon nitride mask permits higher power to be used when ITO is etched by a plasma containing CH.sub.3. and Ar.sup.+ thereby increasing the etch rate of ITO.

Plasma etching indium tin oxide using a deposited silicon nitride mask

ITO is etched by a plasma containing CH.sub.3 .cndot. and Ar.sup.+. Argon ions cause a significant increase in the etch rate.

Plasma etching indium tin oxide

A method of forming a planar ITO gate electrode structure with sub-micron spacing includes forming L-shaped nitride spacer portions.

Forming planar ITO gate electrode array structures

ITO is etched by a plasma containing CH.sub.3. gas.

Etching indium tin oxide

A method for cleaning metallic impurities from a silicon surface of a semiconductor device is described. The first method includes, in sequence, the steps of:

Gaseous cleaning method for silicon devices

A process is described to eliminate the re-entrant profile in double polysilicon gate structures commonly used in VLSI microelectronic devices such as CCDs is eliminated by depositing a conformal insulating layer (5) on the poly-oxide layer (4), plasma etching to form spacer (6), oxidizing gate electrode (3) and substrate (10 to form oxide layer (7), and forming overlapping second gate electrode (8).

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Webster, NY, United States of America

Paul L Roselle