Motorola Corporation

Paul L Bergstrom

Frank A Shemansky, Jr

Muh-Ling Ger

Juergen A Foerstner

Guang X Li

John E Schmiesing

Henry G Hughes

Daniel J Koch

Hak-Yam Tsoi

DaXue Xu

A capacitively sensed micromachined component includes an electrically insulative substrate ( ) having a first side ( ) and a second side ( ) opposite the first side. The component also includes a first layer ( ) adjacent to the second side of the electrically insulative substrate where at least a first portion of the first layer located adjacent to the second side of the electrically insulative substrate is infra-red light absorbing and is also electrically conductive. The component further includes a diffusion and chemical barrier layer ( ) encapsulating the first layer and the electrically insulative substrate. The component still further includes a capacitively sensed micromachined device ( ) on the diffusion and chemical barrier layer.

Capacitively sensed micromachined component and method of manufacturing

A semiconductor wafer level package used to encapsulate a device fabricated on a semiconductor substrate wafer before dicing of the wafer into individual chips. A cap wafer may be bonded to the semiconductor substrate using a low temperature frit glass layer as a bonding agent. The frit glass layer is in direct contact with the device. A hermetic seal is formed by a combination of the semiconductor substrate wafer, the cap wafer and the frit glass layer. A second embodiment of the package does not contain a cap wafer.

Method of manufacturing a semiconductor wafer level package

A sensor has an electrode (,) that is movable along three mutually perpendicular axes (,). The sensor also has stationary over-travel limiting structures that restrict the movement of the electrode (,) along the three axes (,).

Sensor and method of use

A sensor has an electrode (120) that is movable along three mutually perpendicular axes (10, 11, 12). The sensor also has stationary over-travel limiting structures that restrict the movement of the electrode (120) along the three axes (10, 11, 12).

A semiconductor device (50) has a sensing element (30) and a transistor (40). The sensing element (30) is formed in a cavity (11) in a substrate (10). The sensing element (30) is formed in part using an epitaxial deposition process that fills the cavity (11) with a conductive material (18) such as polysilicon. A dielectric layer (17) is used to electrically isolate the sensing element (30) from the substrate (10).

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Chandler, AZ, United States of America

Paul L Bergstrom