University of California

Lockheed Martin Corporation

Sumitomo Osaka Cement Co., Ltd.

Optium Corporation

National Institute of Information and Communication

Paul Kit Lai Yu

Tetsuya Kawanishi

Kaoru Higuma

Thomas William Karras

Stephen Bradley Krasulick

Terence D Grenda

David L Enlow

Jianxiao Chen

Exemplary methods of maximizing a spur-free dynamic range (SFDR) or a gain of an electro-absorption modulator (EAM) are disclosed. At least one parameter in a set of design parameters for an EAM is varied. An SFDR of the EAM is determined in part by a first set of design parameters. A gain of the EAM is determined in part by a second set of design parameters. An output versus bias voltage transfer curve of the EAM is generated. An optimal SFDR bias voltage at which a maximum SFDR occurs for a given optical input power or an optimal gain bias voltage at which a maximum gain occurs for a given optical input power is programmatically determined based at least in part on the transfer curve.

Methods of optimizing spur-free dynamic range or gain in electro-absorption modulators

The invention provides tunable delay or resonator devices in an electro optical substrate. Signals in at least one waveguide in the electro optical substrate pass through Y-junction reflectors which direct signals from one branch of the waveguide back into another branch of the waveguide. A coupled delay or resonator approximated loop is presented in an embodiment of the invention with opposing Y-junction reflectors. In other embodiments of the invention, a delay ladder is provided with selectable levels of delay from multiple outputs.

Y-junction reflector tunable delay or resonator waveguide devices

An electra-absorption modulator and electra-absorption modulated laser are described that include a semiconductor layer having an electrically controllable absorption. The material composition of the semiconductor layer is chosen so that the semiconductor layer is substantially transparent to light propagating through the semiconductor layer when a substantially zero or a reverse bias voltage is applied across the semiconductor layer at operating temperatures of the electro-absorption modulator that are substantially greater than 25 degrees Celsius.

Electro-absorption modulated laser with high operating temperature tolerance

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San Diego, CA, United States of America

Paul Kit Lai Yu