Lam Research Corporation

Novellus Systems Incorporated

Miasole

Beijing Apollo Ding Rong Solar Technology Co., Ltd.

Apollo Precision Fujian Limited

Other

Apollo Precision Kunming Yuanhong Limited

Paul K Shufflebotham

Michael S Barnes

Daniel R Juliano

Heinrich Von Bunau

Robert Michael Martinson

Kevin Lynch

Brian K McMillin

Neil Mackie

Robert D Tas

Deborah Sloan

Alex T Demos

Huong Nguyen

Monique Ben-Dor

Vikram Singh

John Frederick Corson

Ron Rulkens

Robert A Maraschin

Todd Allen Krajewski

Larry D Hartsough

Butch Berney

Dean R Denison

Alex Austin

Mark Weise

Ajay Saproo

Jochen Titus

Christopher Charles Griffin

Robert J Whiting

Mathew Sheffield

A sputtering target assembly, including a cylindrical backing tube, a magnet assembly disposed within the backing tube, and a conduit disposed within the backing tube and adapted for transporting coolant. The conduit includes at least one first opening positioned for providing the coolant in a substantially circumferential direction from the conduit toward an inner surface of the backing tube into a gap volume between a front side of the magnet assembly and the inner surface of the backing tube.

Cooling water jet pack for high power rotary cathodes

A deposition apparatus includes an input spool located in non-vacuum input module, at least one vacuum process module, an accumulator, and an air to vacuum sealing mechanism. The accumulator and the sealing mechanism are configured to continuously provide a web substrate from the input spool at atmosphere into the at least one process module at vacuum without stopping the web substrate.

Continuous web apparatus and method using an air to vacuum seal and accumulator

A photovoltaic cell includes a p-type copper-indium-gallium-selenide absorber layer, where a content of Cu, In, and Ga in a first portion of the p-type copper-indium-gallium-selenide absorber layer satisfies the equation Cu/(In+Ga)&#x2266;0.3, and where the content is measured in atomic percent.

Photovoltaic cell with copper poor CIGS absorber layer and method of making thereof

A photovoltaic device is made using a method and a system disclosed herein. The method may comprise: providing a web of photovoltaic material; providing a web of interconnect material; cutting the web of photovoltaic material into a plurality of photovoltaic cells; cutting the web of interconnect material into a plurality of interconnects; providing a respective one of the plurality of interconnects between adjacent photovoltaic cells to electrically connect a first string of photovoltaic cells in series; and laminating the first string of photovoltaic cells which are electrically connected in series between a top laminating sheet and a bottom laminating sheet. The system may comprise: a first conveyor, an optical inspection apparatus, a removal apparatus, a sorter, a second conveyor, and an assembly apparatus configured to place an interconnect between adjacent photovoltaic cells to electrically connect a first string of photovoltaic cells in series.

Photovoltaic device and method and system for making photovoltaic device

A combination photovoltaic and wind power generation installation comprising at least one wind turbine and a plurality of photovoltaic arrays, wherein the photovoltaic arrays may be disposed around the at least one wind turbine such that the photovoltaic arrays are at least partially shaded a portion of the day by the shadow cast by the at least one wind turbine. Photovoltaic modules that are resistant to shading effects may be used to minimize the effects of shading by the at least one wind turbine. The combination photovoltaic and wind power generation installation may transmit power through a single transmission line.

Combination photovoltaic and wind power generation installation

An exemplary method and apparatus for abating reaction products from a vacuum processing chamber includes a reaction chamber in fluid communication with the vacuum processing chamber, a coil disposed about the reaction chamber, and a power source for supplying RF energy to the coil. The coil creates a plasma in the reaction chamber which effectively breaks down stable reaction products from the vacuum processing chamber such as perfluorocarbons (PFCs) and hydrofluorocarbons (HFCs) which significantly contribute to global warming. According to alternative embodiments, the plasma may be generated with grids or coils disposed in the reaction chamber perpendicular to the flow of reaction products from the vacuum processing chamber.

Method and apparatus for abatement of reaction products from a vacuum processing chamber

Provided are photovoltaic module assemblies configured for improved installation. The assemblies include frameless photovoltaic modules and retainers for supporting the modules on mounting structures. The retainers support the modules at least during cure of adhesive materials provided between the modules and the mounting structures. Once cured, the adhesive materials provide permanent support to the modules. The retainers may interlock with the mounting structures during installation or be integral components of the structures. In certain embodiments, retainers are used to control a gap between the modules and mounting structures. Retainers may be removable and collected after installation is completed. Alternatively, retainers may remain as parts of assemblies at least during some initial period. Retainers may be made from various degradable materials, such as biodegradable plastics, UV degradable plastics, and/or water soluble materials. Provided also are methods for installing frameless photovoltaic modules on mounting structures.

Retainers for attaching photovoltaic modules to mounting structures

A method of making a photovoltaic device includes forming a compound semiconductor layer including copper, indium, gallium, selenium and sulfur by reactive sputtering at least one target including copper, indium, gallium and a sulfur compound in an atmosphere including selenium.

Sulfur salt containing CIG targets, methods of making and methods of use thereof

A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a RF antenna coil. A plasma cleaning step is performed by contacting interior surfaces of the chamber with the plasma for a time sufficient to remove the deposits on the interior surfaces. An advantage of the plasma cleaning method is that it allows for in-situ cleaning of the chamber at high rates, thereby effectively reducing equipment downtime. The method has particular applicability in the cleaning of a PECVD process chamber.

Method of depositing a silicon containing layer on a semiconductor substrate

The present invention provides plasma processing systems and methods for providing a set-point temperature for substrates during plasma processing by controlling clamping force or RF power. The plasma processing system includes a plasma chamber, a controller, and an electrostatic power supply. The plasma chamber is arranged to receive an RF power and a source gas for producing plasma. The plasma chamber includes an electrostatic chuck for clamping a substrate in place during plasma processing. The electrostatic chuck includes an electrode and a sensor, which is arranged to monitor temperature of the substrate being processed. The controller is coupled to the sensor to receive the substrate temperature and is configured to generate a control signal for driving the substrate temperature to the set-point temperature. The electrostatic power supply is coupled between the controller and the electrode in the electrostatic chuck. The electrostatic power supply receives the control signal from the controller and generates a voltage adapted to clamp the substrate with a clamping force. In this configuration, the electrostatic power supply provides the voltage to the electrode to clamp the substrate such that the substrate temperature is driven to the set-point temperature.

Predictive wafer temperature control system and method

A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.

Inductively coupled plasma CVD

A gap filling process of depositing a film of SiO.sub.2 in gaps on a substrate by generating plasma in a process chamber by energizing gas containing silicon, oxygen and a heavy noble gas such as xenon or krypton. The gaps can have widths below 0.5 .mu.m and aspect ratios higher than 1.5:1. A substrate is supported on a substrate support wherein a gas passage supplies a temperature control gas into a space between opposed surfaces of the substrate and the substrate support, and the film is grown in the gaps on the substrate by contacting the substrate with the plasma. The silicon reactant can be SiH.sub.4 and the oxygen reactant can be pure oxygen gas supplied by O.sub.2 /SiH.sub.4 ratio of .ltoreq.1.05. The plasma can be a high density plasma produced in an ECR or TCP reactor and the substrate can be a silicon wafer including aluminum conductor lines.

Method of high density plasma CVD gap-filling

A plasma resistant lightpipe is used in a pyrometric temperature measurement system to measure the temperature of a substrate in a reaction chamber. The plasma resistant lightpipe includes two lightpipe elements. The first lightpipe element, which may be a sapphire rod or aluminum nitride rod, is positioned within a backside gas delivery path to the chamber. The first lightpipe element is resistant to etching caused by reactive plasmas or gases used within the chamber, such as fluorine. The second lightpipe, which is a quartz rod, is positioned beneath the first lightpipe element such that the two lightpipe elements are optically coupled. The first lightpipe element may be directly mounted in the base plate or electrostatic chuck of the pedestal assembly or directly mounted in a plug, which is then positioned within the base plate or electrostatic chuck. The first lightpipe element is securely mounted into the base plate, electrostatic chuck, or the plug by shrink and/or interference fitting, by spring pins or set screws. In one embodiment, the interface between the first lightpipe element and the second lightpipe element is set in a plane defined by the top surface of the seal plate. Thus, there is little danger of damaging the lightpipe elements during the removal of the electrostatic chuck and base plate.

Growing community of inventors

Fremont, CA, United States of America

Paul K Shufflebotham