Silicon Genesis Corporation

Silicon General Corporation

Paul K Chu

Chung M Chan

A G Liu

A plasma treatment system (,) for implantation with a novel susceptor with a perforated shield (,) and collection devices (,). The system (,) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (,) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (,) draws ions from the implantation toward and through the shield to improve implant uniformity in the substrate. The collection device accumulates charge that can detrimentally influence the substrate during processing. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (,) on a surface of the chamber. The system (,) also has an rf generator (,) and at least two rf sources in other embodiments.

Collection devices for plasma immersion ion implantation

A plasma treatment system (,) for implantation with a novel susceptor with a cotoured underlying surface (,). The system (,) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (,) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The contoured underlying surface deflects impinging ions in a direction away from the substrate surface, thereby reducing a possibility of particulate contamination on the substrate. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (,) on a surface of the chamber. The system (,) also has an rf generator (,) and at least two rf sources in other embodiments.

Contoured platen design for plasma immerson ion implantation

A plasma treatment system (,) for implantation with a novel susceptor with a silicon coating (,). The system (,) has a variety of elements such as a chamber, which can have a silicon coating formed thereon, in which a plasma is generated in the chamber. The system (,) also has a susceptor disposed in the chamber to support a silicon substrate. The silicon coating reduces non-silicon impurities that may attach to the silicon substrate. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (,) on a surface of the chamber. The system (,) also has an rf generator (,) and at least two rf sources in other embodiments.

Coated platen design for plasma immersion ion implantation

A plasma treatment system (,) for implantation with a novel susceptor with shielding (,). The system (,) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (,) also has a susceptor disposed in the chamber to support a substrate. A shield (,) is disposed adjacent to the susceptor for blocking impurities that may possibly be introduced from a backside of the susceptor. The shield allows fewer impurities to be sputtered from the backside of the susceptor. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (,) on a surface of the chamber. The system (,) also has an rf generator (,) and at least two rf sources in other embodiments.

Shielded platen design for plasma immersion ion implantation

A plasma treatment system (200) for implantation with a novel susceptor with a silicon coating (203). The system (200) has a variety of elements such as a chamber, which can have a silicon coating formed thereon, in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate. The silicon coating reduces non-silicon impurities that may attach to the silicon substrate. The system (200) also includes a silicon liner, which is used to line inner portions of the chamber walls.

Removable liner design for plasma immersion ion implantation

A plasma immersion implantation system (100), including a network for controlling the system. The network communicates to the system by way of packets, which are used to pass signals to and from one of a plurality of controllers. The controllers are used to oversee one of a plurality of processing parameters or field processes such as rf voltage, pressure, etc.

Distributed system and code for control and automation of plasma

A plasma treatment system (200) for implantation with a novel susceptor with a perforated shield (201). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (201) draws ions from the implantation toward and through the shield to improve implant uniformity in the substrate. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments.

Growing community of inventors

Hong Kong, China

Paul K Chu