Mattson Technology, Inc

Beijing E-town Semiconductor Technology, Co., Ltd

Other

Paul J Timans

Michael Xiaoxuan Yang

Rolf Bremensdorfer

Markus Lieberer

Systems and methods for thermal processing of a workpiece at low temperatures are disclosed. In one example implementation, a thermal processing apparatus includes a processing chamber having a workpiece support. The workpiece support can be configured to support a workpiece. The apparatus can include one or more heat sources configured to emit electromagnetic radiation in a first wavelength range to heat the workpiece to a processing temperature. The processing temperature can be in the range of about 50° C. to 150° C. The apparatus can include one or more sensors configured to obtain a measurement of electromagnetic radiation in a second wavelength range when the workpiece is at the processing temperature. The second wavelength range can be different from the first wavelength range.

Systems and methods for thermal processing and temperature measurement of a workpiece at low temperatures

Methods and systems for providing a short-duration anneal are provided. In one example, the methods and systems can include placing a workpiece in a thermal processing chamber. The workpiece can include a device side surface and an opposing non-device side surface. The methods and systems can include delivering an energy pulse from at least one heat source to the non-device side surface of the workpiece. In another example, the methods and systems can include depositing a layer of semiconductor material onto the semiconductor workpiece at the device side of the semiconductor workpiece. The methods and systems can include doping the layer of semiconductor material with a doping species and annealing the layer for crystallization using solid phase epitaxy.

Low thermal budget annealing

Preheat processes for a millisecond anneal system are provided. In one example implementation, a heat treatment process can include receiving a substrate on a wafer support in a processing chamber of a millisecond anneal system; heating the substrate to an intermediate temperature; and heating the substrate using a millisecond heating flash. Prior to heating the substrate to the intermediate temperature, the process can include heating the substrate to a pre-bake temperature for a soak period.

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Cambridge, United Kingdom

Paul J Timans