Varian Semiconductor Equipment Associates, Inc.

Applied Materials, Inc.

Other

Paul J Murphy

Frank Sinclair

Paul Sullivan

Charles T Carlson

Connie P Wang

David T Blahnik

Kasegn D Tekletsadik

Joseph C Olson

Robert Brent Vopat

Mark R Amato

Anthony Renau

Julian G Blake

Costel Biloiu

Richard S Muka

James D Strassner

Roger Bradford Fish

Michael Honan

Saeed Jazebi

Eric D Hermanson

Steven Raymond Walther

Atul Gupta

Jonathan Gerald England

Sukti Chatterjee

Rosario Mollica

Reuel B Liebert

Krag R Senior

Bharatwaj Ramakrishnan

Ludovic Godet

William Davis Lee

Morgan Evans

Bon-Woong Koo

Peter F Kurunczi

Russell J Low

Alexander S Perel

Nicholas P T Bateman

Daniel R Tieger

Tseh-Jen Hsieh

D Jeffrey Lischer

David E Suuronen

Dawei Sun

Aaron Webb

James Paul Buonodono

Piotr R Lubicki

Arthur H Clough

Nicholas Pt Bateman

Jun Lu

Charles M McKenna

David J Morrell

Gary E Dickerson

Donna Smatlak

Bjorn O Pedersen

Scott W Nickerson

Guy Oteri

James J Cummings

Peter E Maciejowski

Chi-Yang Cheng

George Emmanuel

Kasegn D Takletsadik

Kurt Deckerlucke

Mark Donahue

William G Goodenough

Gregory Edward Stratoti

Wayne Chen

Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, a LINAC may include a coil resonator and a plurality of drift tubes coupled to the coil resonator by a set of flexible leads.

Linear accelerator assembly including flexible high-voltage connection

A load lock in which the pumping speed is controlled so as to minimize the possibility of condensation is disclosed. The load lock is in communication with a vacuum pump and a valve. A controller is used to control the valve such that the supersaturation ratio within the load lock does not exceed a predetermined threshold, which is less than or equal to the critical value at which vapor condenses. In certain embodiments, a computer model is used to generate a profile, which may be a pumping speed profile or a pressure profile, and the valve is controlled according to the profile. In another embodiment, the load lock comprises a temperature sensor and a pressure sensor. The controller may calculate the supersaturation ratio based on these parameters and control the valve accordingly.

Model-based controlled load lock pumping scheme

A coil inductor for use with a LINAC is disclosed. The coil inductor comprises one or more tubes, wherein each tube comprises an interior support structure to strengthen the tubes. By supporting the tube, the amount of vibration is reduced, allowing the coil to resonate at its natural frequency. In some embodiments, the interior structure comprises one or more interior walls. These interior walls may be used to create a plurality of fluid channels that allow the flow of coolant through the tubes. An end cap may be disposed on the second end of the tubes to allow fluid communication between the supply fluid channels and the return fluid channels. The first ends of the one or more tubes may be connected to a manifold that includes a supply port and a return port for the passage of coolant.

Stiffened RF LINAC coil inductor with internal support structure

Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.

Resonator coil having an asymmetrical profile

Embodiments herein are directed to a linear accelerator assembly for an ion implanter. In some embodiments, the linear accelerator assembly may include a central support within a chamber, and a plurality of modules coupled to the central support, at least one module of the plurality of modules including an electrode having an aperture for receiving and delivering an ion beam along a beamline axis.

Modular linear accelerator assembly

An apparatus may include a drift tube assembly, arranged to transmit an ion beam. The drift tube assembly may include a first ground electrode; an RF drift tube assembly, disposed downstream of the first ground electrode; and a second ground electrode, disposed downstream of the RF drift tube assembly. The RF drift tube assembly may define a triple gap configuration. The apparatus may include a resonator, where the resonator comprises a toroidal coil, having a first end, connected to a first RF drift tube of the RF drift tube assembly, and a second end, connected to a second RF drift tube of the RF drift tube assembly.

Resonator, linear accelerator configuration and ion implantation system having toroidal resonator

An ion implanter may include an ion source, arranged to generate a continuous ion beam, a DC acceleration system, to accelerate the continuous ion beam, as well as an AC linear accelerator to receive the continuous ion beam and to output a bunched ion beam. The ion implanter may also include an energy spreading electrode assembly, to receive the bunched ion beam and to apply an RF voltage between a plurality of electrodes of the energy spreading electrode assembly, along a local direction of propagation of the bunched ion beam.

Apparatus, system and method for energy spread ion beam

An apparatus may include an RF power assembly, arranged to output an RF signal, and a drift tube assembly, arranged to transmit an ion beam, and coupled to the RF power assembly. The drift tube assembly may include a first ground electrode; an AC drift tube assembly, disposed downstream of the first ground electrode; and a second ground electrode, disposed downstream of the AC drift tube assembly, where the AC drift tube assembly comprises at least one variable length AC drift tube.

System, apparatus and method for variable length electrode in linear accelerator

A superconducting fault current limiter element, comprising: a plurality of tapes, arranged in electrical parallel fashion among one another, wherein at least one tape of the plurality of tapes comprises a superconductor tape, and wherein at least one tape of the plurality of tapes comprises a non-superconductor tape.

Superconducting fault current limiter having improved energy handling

Embodiments of the disclosure provide a current protection device with a mutual reactor including a first winding and a second winding. The current protection device is a subcomponent of a previously developed fault current limiter. The current protection device protects the superconductor from potential damage. The current protection device may include a coil electrically connected in series with the first winding or the second winding, an actuator mechanically coupled at an output of the coil, and an electrical interrupter electrically connected to the first and second windings, wherein the actuator is communicatively coupled with the electrical interrupter to actuate a moveable contact of a set of breaker contacts of the electrical interrupter. In some embodiments, the first and second windings are arranged in parallel to one another. In some embodiments, the coil is electrically coupled to an output of the first winding or the second winding.

Current protection device with mutual reactor

Embodiments of the disclosure include a fault current limiter (FCL) providing symmetrical electrostatic shielding. In some embodiments, a FCL includes a superconductor maintained at a first voltage greater than zero voltage, and an enclosure containing the superconductor, the enclosure maintained at a second voltage greater than zero voltage, wherein the second voltage is different from the first voltage. The FCL may include an electrical connection directly coupling the superconductor and the enclosure, wherein the electrical connection enables each of a plurality of current limiting modules of the superconductor to receive, during a fault condition, an equal or unequal sub-portion of a total voltage drop.

Fault current limiter providing symmetrical electrostatic shielding

An integrated superconductor device may include a substrate base and an intermediate layer disposed on the substrate base and comprising a preferred crystallographic orientation. The integrated superconductor device may further include an oriented superconductor layer disposed on the intermediate layer and a conductive strip disposed on a portion of the oriented superconductor layer. The conductive strip may define a superconductor region of the oriented superconductor layer thereunder, and an exposed region of the oriented superconductor layer adjacent the superconductor region.

Integrated superconductor device and method of fabrication

In one embodiment, a method to form a superconductor device includes depositing a crystalline layer having a preferred crystallographic orientation on a substrate and forming an oriented superconductor layer comprising an oriented superconductor material on the crystalline layer. A metallic layer is formed on the superconductor layer and a mask is provided proximate the substrate to define a protected portion of the oriented superconductor layer and an exposed portion of the oriented superconductor layer. The exposed portion of the oriented superconductor layer is removed without etching the protected portion of the oriented superconductor layer.

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Reading, MA, United States of America

Paul J Murphy