Rohm & Haas Electronic Materials LLC

Dow Global Technolgoies LLC

Dupont Electronic Materials International, LLC

Paul J LaBeaume

James F Cameron

Suzanne M Coley

Shintaro Yamada

Li Cui

James W Thackeray

Vipul Jain

Charlotte A Cutler

David A Valeri

Amy M Kwok

Iou-Sheng Ke

Owendi Ongayi

Sheng Liu

Keren Zhang

Daniel Greene

Mingqi Li

Jin Wuk Sung

Christopher P Sullivan

Bhooshan C Popere

Cecilia W Kiarie

Deyan Wang

William Williams, Iii

Ahmad E Madkour

Aaron A Rachford

Compounds having three or more alkynyl moieties substituted with an aromatic moiety having one or more of certain substituents are useful in forming underlayers useful in semiconductor manufacturing processes.

Aromatic underlayer

The present invention relates to new photoresist compositions that comprise (a) a polymer comprising an acid generator bonded thereto; and (b) an acid generator compound that is not bonded to the polymer and that comprises one or more acid-labile groups.

Photoresists comprising multiple acid generator compounds

Coating compositions comprise: a curable compound comprising: a core chosen from a Ccarbocyclic aromatic ring, a Cheterocyclic aromatic ring, a Cfused carbocyclic aromatic ring system, a Cfused heterocyclic aromatic ring system, Caliphatic, and Ccycloaliphatic, and three or more substituents of formula (1) wherein at least two substituents of formula (1) are attached to the aromatic core; provided that no substituents of formula (1) are in an ortho position to each other on the same aromatic ring of the core; a polymer; and one or more solvents, wherein the total solvent content is from 50 to 99 wt % based on the coating composition.

Coating compositions and methods of forming electronic devices

Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.

Silicon-containing underlayers

Method using silicon-containing underlayers

Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising one or more condensed polymers having an organic polymer chain having pendently-bound moieties having an acidic proton and a pKa in water from &#x2212;5 to 13 and having pendently-bound siloxane moieties are provided.

Compositions for forming thin, silicon-containing antireflective coatings and methods of using these compositions in the manufacture of electronic devices are provided. Silicon-containing antireflective coatings formed from the these compositions can be easily removed during processing without the need for a separate removal step.

Silicon-based hardmask

Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, cyclic sulfonium salt and photoresist compositions that comprise such compounds are provided. In another preferred aspect, acid generator compounds are provided that comprise one or more covalently linked acid-labile moieties, particularly ester-containing acid-labile moieties.

Acid generator compounds and photoresists comprising same

Acid generator compounds are provided that are particularly useful as a photoresist composition component. In one preferred aspect, photoresists are provided that comprise (i) a polymer; (ii) a first onium salt acid generator that produces a first acid upon exposure of the photoresist composition to activating radiation; and (iii) a second onium salt acid generator that 1) comprises a covalently bound acid-labile moiety and 2) produces a second acid upon exposure of the photoresist composition to activating radiation, wherein the first acid and second acid have pKa values that differ by at least 0.5.

Acid generators and photoresists comprising same

Compositions for forming thin, silicon-containing antireflective coatings and methods of using these compositions in the manufacture of electronic devices are provided. Silicon-containing antireflective coatings formed from these compositions can be easily removed during processing without the need for a separate removal step.

Acid generators comprising a carbocyclic or heteroaromatic group substituted with at least one diester moiety are provided. These acid generators are particularly useful as a photoresist composition component.

Substituted aryl onium materials

Wet-strippable underlayer compositions comprising one or more silicon-containing polymers comprising a backbone comprising Si&#x2014;O linkages, one or more organic blend polymers, and a cure catalyst are provided. These compositions are useful in the manufacture of various electronic devices.

A photo-destroyable quencher having Formula (I): wherein in Formula (I), groups and variables are the same as described in the specification.

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Auburn, MA, United States of America

Paul J LaBeaume