Mapper Lithography IP B.v.

Asml Netherlands B.v.

Paul Ijmert Scheffers

Jan Andries Meijer

Vincent Sylvester Kuiper

Niels Vergeer

Erwin Slot

Jerry Johannes Martinus Peijster

Abdourahmane Ange Sarr

A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system () for projecting a plurality of charged particle beamlets () onto the surface of the substrate; a chuck () moveable with respect to the projection system; a beamlet measurement sensor (i.a.i.e.,) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface () for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (), the position mark measurement system comprising an alignment sensor (). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion () for accommodating the surface of the beamlet measurement sensor, and a position mark portion () for accommodating the position mark.

Charged particle lithography system with alignment sensor and beam measurement sensor

The invention relates to a method for determining a beamlet position in a charged particle multi-beamlet exposure apparatus. The apparatus is provided with a sensor comprising a conversion clement for converting charged particle energy into light and a light sensitive detector. The conversion element is provided with a sensor surface area provided with a 2D-pattern of beamlet blocking and non-blocking regions. The method comprises taking a plurality of measurements and determining the position of the beamlet with respect to the 2D-pattern on the basis of a 2D-image created by means of the measurements. Each measurement comprises exposing a feature onto a portion of the 2D-pattern with a beamlet, wherein the feature position differs for each measurement, receiving light transmitted through the non-blocking regions, converting the received light into a light intensity value, and assigning the light intensity value to the position at which the measurement was taken.

Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus

The invention relates to a substrate holding device comprising a holding plate, a base plate, an array of supports, and an array of droplets of a heat absorbing material. The holding plate comprises a first side for holding a substrate. The base plate is arranged at a distance from the holding plate and provides a gap between the base plate and the holding plate at a side of the holding plate opposite to the first side. The array of supports is arranged in between the holding plate and the base plate. The array of liquid and/or solid droplets is arranged in between the holding plate and the base plate, and the droplets are arranged to contact both the base plate and the holding plate. The droplets are arranged spaced apart from each other and from the supports, and are arranged adjacent to each other in a direction along the gap.

Substrate holding device, method for manufacturing such a device, and use of such a device in a lithography system

A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system () for projecting a plurality of charged particle beamlets () onto the surface of the substrate; a chuck () moveable with respect to the projection system; a beamlet measurement sensor (i.a.) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface () for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (), the position mark measurement system comprising an alignment sensor (). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion () for accommodating the surface of the beamlet measurement sensor, and a position mark portion () for accommodating the position mark.

The invention relates to a method for determining a beamlet position in a charged particle multi-beamlet exposure apparatus. The apparatus is provided with a sensor comprising a conversion element for converting charged particle energy into light and a light sensitive detector. The conversion element is provided with a sensor surface area provided with a 2D-pattern of beamlet blocking and non-blocking regions. The method comprises taking a plurality of measurements and determining the position of the beamlet with respect to the 2D-pattern on the basis of a 2D-image created by means of the measurements. Each measurement comprises exposing a feature onto a portion of the 2D-pattern with a beamlet, wherein the feature position differs for each measurement, receiving light transmitted through the non-blocking regions, converting the received light into a light intensity value, and assigning the light intensity value to the position at which the measurement was taken.

The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9-3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.

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Delft, Netherlands

Paul Ijmert Scheffers