Freescale Semiconductor,inc.

Motorola Corporation

Paul Hui

Ronghua Zhu

Vishnu Khemka

Amitava Bose

Todd C Roggenbauer

Vijay Parthasarathy

Xiaoqiu Huang

James Jen-Ho Wang

Michael C Butner

Van Wong

An electronic device can include a substrate, a buried insulating layer overlying the substrate, and a semiconductor layer overlying the buried insulating layer, wherein the semiconductor layer is substantially monocrystalline. The electronic device can also include a conductive structure extending through the semiconductor layer and buried insulating layer and abutting the substrate, and an insulating spacer lying between the conductive structure and each of the semiconductor layer and the buried insulating layer.

Electronic device including a conductive structure extending through a buried insulating layer

A process of forming an electronic device can include providing a semiconductor-on-insulator substrate including a substrate, a first semiconductor layer, and a buried insulating layer lying between the first semiconductor layer and the substrate. The process can also include forming a field isolation region within the semiconductor layer, and forming an opening extending through the semiconductor layer and the buried insulating layer to expose the substrate. The process can further include forming a conductive structure within the opening, wherein the conductive structure abuts the substrate.

Process of forming an electronic device including a conductive structure extending through a buried insulating layer

A semiconductor device has contact between the last interconnect layer and the bond pad that includes a barrier metal between the bond pad and the last interconnect layer. Both a passivation layer and a polyimide layer separate the last interconnect layer and the bond pad. The passivation layer is patterned to form a first opening to contact the last interconnect layer. The polyimide layer is also patterned to leave a second opening that is inside and thus smaller than the first opening through the passivation. The barrier layer is then deposited in contact with the last interconnect layer and bounded by the polyimide layer. The bond pad is then formed in contact with the barrier, and a wire bond is then made to the bond pad.

Contact surrounded by passivation and polymide and method therefor

A method of manufacturing a semiconductor component includes forming a first electrically insulating layer () and a second electrically insulating layer () over a semiconductor substrate (). The method further includes etching a first trench () and a second trench () through the first and second electrically insulating layers and into the semiconductor substrate, and etching a third trench () through a bottom surface of the second trench and into the semiconductor substrate. The third trench has a first portion () and a second portion () interior to the first portion. The method still further includes forming a third electrically insulating layer () filling the first trench and the first portion of the third trench without filling the second portion of the third trench, and also includes forming a plug layer () in the second portion of the third trench.

Method of manufacturing a semiconductor component

An electronic component includes a semiconductor substrate ( ), an epitaxial semiconductor layer ( ) over the semiconductor substrate, and a semiconductor region ( ) in the epitaxial semiconductor layer. The epitaxial semiconductor layer has an upper surface ( ). A first portion ( ) of the epitaxial semiconductor layer is located below the semiconductor region, and a second portion ( ) of the epitaxial semiconductor layer is located above the semiconductor region. The semiconductor substrate and the first portion of the epitaxial semiconductor layer have a first conductivity type, and the semiconductor region has a second conductivity type. At least one electrically insulating trench ( ) extends from the upper surface of the epitaxial semiconductor layer into at least a portion of the semiconductor region. The semiconductor substrate has a doping concentration higher than a doping concentration of the first portion of the epitaxial semiconductor layer.

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Paul Hui