Imec

Imec Vzw

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Katholieke Universiteit Leuven

Katholieke Universiteit Leuven, Ku Leuven R&d

Interuniversitair Microelektronica Centrum (imec)

E.t.c. S.r.l.

Interuniversitair Micro-elektronica Centrum Vzw

Muccini, Michele

Paul Heremans

Maarten Kuijk

Gustaaf Regina Borghs

Roger A Vounckx

Michele Muccini

Raymond Ziessel

Roland Schmechel

Aline Hepp

Holger Heil

Sarah Schols

Reiner Windisch

Johan Lieven Hendrik Reynaert

Soeren Steudel

Jan Genoe

Zsolt Tokei

David Cheyns

Heinz Von Seggern

Stijn Verlaak

Vladimir Arkhipov

Kris Myny

Vlatko Milosevski

Pawel Malinowski

Andrey Kadashchuk

Alexander Mityashin

Tung Huei Ke

Nikolaos Papadopoulos

Johan Lieven Hendrik Yeynaert

Maarten Debucquoy

Dimitri Janssen

Sören Steudel

Daniel Coppee

Cedric Rolin

Jeong-Hwan Lee

Example embodiments relate to monolithically integrated antenna devices. One embodiment includes a monolithically integrated antenna device that includes a substrate having a first surface and a second surface. The monolithically integrated antenna device also includes a transistor component layer that includes at least one electronic component therein. Further, the monolithically integrated antenna device includes at least one antenna structure formed on the substrate or the transistor component layer. The antenna structure is configured to operate in a frequency range of between 30 kHz and 2.4 GHz. The substrate is configured to have a size that is the same or larger than the at least one antenna structure. The at least one antenna structure is formed in a stack with the transistor component layer and the substrate. The monolithically integrated antenna device is configured to shield the at least one electronic component in the transistor component layer from electromagnetic interference.

Monolithically integrated antenna devices

A Light Emitting Diode (LED) device, particularly a micro-LED (&#x3bc;LED) device, suitable for a &#x3bc;LED display is described. The LED device comprises a LED array with a plurality of LEDs. It also comprises at least one top contact and bottom contact electrically connected to the LED array. Further, it comprises a conductive structure arranged above the LED array and the top contact, respectively, and electrically connected to the top contact. The conductive structure is, regarding each LED of the LED array, configured to absorb a first part of the light emitted by the LED, and to pass a second part of the light emitted by the LED. An emission angle (beam angle) of the passed light is thereby smaller than an emission angle of the light emitted by the LED.

Apex angle reduction in a LED device with a LED array

An electroluminescence generating device comprising e. a channel of organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; f. an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer; g. a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole electrode being in contact with said channel and positioned on top of said first side of said channel layer or within said channel layer, said hole electrode being able to inject holes into said channel; h. a control electrode positioned on said first side or on a second side of said channel; whereby light emission of said electroluminescence generating device can be acquired by applying an electrical potential difference between said electron electrode and said hole electrode.

Organic electroluminescence generating devices

The present invention is directed to solid state organic light emitting devices and to methods for triplet excitation scavenging in such devices. More particularly, the present invention relates to a method for substantially reducing a triplet population in a solid state organic material, the method comprising providing molecules exhibiting non-vertical triplet energy transfer in the solid state organic material or at a distance smaller than a triplet exciton diffusion length from the solid state organic material.

Triplet excitation scavenging in solid-state organic materials

An electroluminescence generating device comprising a channel of organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer; a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole channel and positioned on top of within said channel layer, said hole electrode being able to inject holes into said channel; a control electrode positioned on said first side or on a second side of said channel; whereby light emission of said electroluminescence generating device can be acquired by applying an electrical potential difference between said electron electrode and said hole electrode.

In the present invention a novel method and device for measuring characteristics from a relatively weak signal comprising desired and undesired components is presented. Undesired signals may arise from the nature of the characteristic, from the detector or from the circuitry. The signal is extracted from a first measurement element () comprising these desired and undesired components. Using another signal from this first measurement element or from another second measurement element () the undesired components can be eliminated. The measurement method is extremely useful when using organic materials for the detectors, electronic circuitry, and measurement elements. These devices can be produced relatively cheap, but less reliable. They can also be combined in a one- or two-dimensional array for measuring characteristics over a larger area.

Sensor for eliminating undesired components and measurements method using said sensor

An organic photo-detecting field-effect device is presented, the device comprising a first layer comprising an organic semi-conducting material, the first layer acting as an accumulation layer and as a charge transport layer for a first type of charge carriers, and a second layer comprising a second material, the second layer acting as a an accumulation layer for a second type of charge carriers. Charges collected in the second layer influence the charge transport in the first layer. The second material may be an organic semi-conducting material or a metal. At the interface between the first layer and the second layer a heterojunction is formed in the case of an organic semi-conducting second material, and a Schottky barrier is formed in the case of a metal second material, giving rise to an efficient exciton splitting. Different geometries and operation modes facilitating the removal of the collected photo-generated charge carriers during the reset period of the device are presented. Furthermore, a method for operating an organic photo-detecting field-effect device is provided.

Organic semi-conductor photo-detecting device

A two-terminal organic light-emitting device structure is presented with low absorption losses and high current densities. Light generation and emission occur at a predetermined distance from any metallic contact, thereby reducing optical absorption losses. High current densities and thus high emitted light intensity are achieved by combining two types of conduction in one device: by combining space charge limited conduction and field-effect conduction or by combining ohmic conduction and field-effect conduction, thereby optimizing the current densities. This results in a very high local concentration of excitons and therefore a high light intensity, which can be important for applications such as organic lasers, and more in particular electrically pumped organic lasers.

Organic light-emitting device with field-effect enhanced mobility

Contact structures and methods for forming such contact structures are disclosed. An example contact structure includes a layer of semiconductor material having an interface and an electrical contact at the interface of the layer of semiconductor material, where the electrical contact includes a granular metal. An example method for forming a contact structure includes providing a substrate and producing a granular metal on at least part of the substrate, where the granular metal includes a cluster of metal islands extending essentially in a two-dimensional plane. The method further includes depositing a layer of a semiconductor material on top of the substrate and the cluster of metal islands.

Contact structure comprising semiconductor and metal islands

The present invention relates to methods for producing a patterned thin film on a substrate. The method comprises the spatially and possibly also temporally modulation of nucleation modes of film growth during the growth of patterned thin films. The nucleation modes are modulated between no or substantially no nucleation, 2D nucleation, and 3D nucleation. The modulation is obtained by adjusting the surface treatment spatially applied over regions of the substrate, the growth conditions for the thin film materials used, and/or the specific thin film materials used. The growth conditions typically comprise the substrate temperature and the deposition flux. The modulation allows for spatially varying the interaction between the substrate material and the thin film materials deposited.

Method for producing patterned thin films

A device emits radiation at a predetermined wavelength. The device includes a light-emitting structure which generates the radiation. The device further includes at least one reflective edge in radiative communication with the light-emitting structure, the reflective edge having a dielectric portion. The device further includes at least one electrical contact extending through the dielectric portion of the reflective edge, the contact in electrical communication with the light-emitting structure.

High-efficiency radiating device

An optical fiber and method of making the same, the optical fiber being characterized by an axial symmetry and comprising a core, doped with phosphorescent or fluorescent impurities, and a transparent envelope. The transparent envelope comprises a cladding layer and optionally a jacket layer surrounding the cladding layer. The optical fiber may further comprise an associated light source comprising an inner electrode, an outer electrode, and an active area, located between said inner electrode and said outer electrode. The light source and said optical fiber are integrated as a unit. The light source is characterized by an axial symmetry and is positioned coaxial with respect to the axis of the optical fiber. The inner electrode is substantially transparent, such that light generated in said active area may propagate outside said light source and into the optical fiber.

Integrated optical device and method of making the same

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Leuven, Belgium

Paul Heremans