Dow Global Technolgoies LLC

The Dow Chemical Company

Paul H Townsend, Iii

James P Godschalx

Edward Otto Shaffer, Ii

Kenneth J Bruza

Qing Shan J Niu

Kevin J Bouck

Dennis W Smith, Jr

Lynne K Mills

Robert F Harris

Clark H Cummins

Kevin E Howard

Sheila Gombar-Fetner

Joost J M Waeterloos

Donald L Schmidt

Zenon Lysenko

Duane R Romer

Michael E Mills

Larry R Wilson

Robert A Devries

James C Tou

Ying Hung So

Gary R Buske

Kenneth L Foster

Steven J Martin

Jack E Hetzner

Theodore M Stokich, Jr

Richard J Strittmatter

Brian B Martin

Donald C Frye

This invention is directed to a method of making a composition in which a silane having an unsaturated group and a silane having an aromatic group are hydrolyzed. In this method the more highly reactive silane is continuously added during the hydrolysis reaction of the less reactive silane. The composition can be used in the fabrication of microelectronic devices, particularly as hardmasks or etchstops.

Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices

This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material.

A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a Tof greater than 300&#xb0; C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

Composition containing a cross-linkable matrix precursor and a poragen, and porous matrix prepared therefrom

A method of forming at least a partial air gap within a semiconducting device and the resulting devices, said method comprising the steps of: (a) depositing a sacrificial polymeric composition in one or more layers of the device during its formation; (b) coating the device with one or more layers of a relatively non-porous, organic, polymeric, insulating dielectric material (hardmask) having a density less than 2.2 g/cm; and (c) decomposing the sacrificial polymeric composition such that the decomposition products permeate at least partially through the one or more hardmask layers, thereby forming at least a partial air gap within the device.

Process for making air gap containing semiconducting devices and resulting semiconducting device

Composition containing a cross-linkable matrix precursor and a poragen, and a porous matrix prepared therefrom

This invention relates to a method of dual damascene integration for manufacture of integrating circuits using three top hard mask layers having alternating etch selectivity characteristics.

Tri-layer masking architecture for patterning dual damascene interconnects

A cured polyphenylene polymer having a glass transition temperature no greater than 465&deg; C. An integrated circuit article having a fracture toughness as determined by the modified edge liftoff test of at least 0.3 MPa-m .

Low dielectric constant polymers having good adhesion and toughness and articles made with such polymers

A suitable cross-linkable matrix precursor and a poragen can be treated to form a porous cross-linked matrix having a T of greater than 300&deg; C. The porous matrix material has a lower dielectric constant than the corresponding non-porous matrix material, making the porous matrix material particularly attractive for a variety of electronic applications including integrated circuits, multichip modules, and flat panel display devices.

This invention is a polyarylene composition in which resin does not undergo a significant drop in modulus at temperatures above 300&deg; C. during cure. This feature enables one to form porous films by avoiding pore collapse and/or using a wider variety of poragen materials.

Polyarylene compositions with enhanced modulus profiles

A composition is comprised of the following: a) a hydrolyzed or partially hydrolyzed alkoxysilane; b) a solvent consisting of an organic liquid or mixture of two or more organic liquids in which component (a) and component (c) are soluble and c) a cross linking prepolymer, oligomer, resin or mixtures thereof that forms a low dielectric constant crosslinked polymer. Preferred crosslinked polymers are of a arylcyclobutene or polyphenylene prepolymer, oligomer, resin or mixtures thereof. A coating may be made using the composition wherein the coating is comprised of a crosslinked polymer of a low dielectric crosslinking prepolymer, oligomer, resin or mixture thereof and a hydrolyzed or partially hydrolyzed alkoxysilane, said coating being adhered to a surface of a substrate wherein said surface is comprised of a first material that is a metal, ceramic or polymer and a second material that is (i) a metal, ceramic, or polymer and (ii) different than the first material.

Adhesion promoter and self-priming resin compositions and articles made therefrom

A method of hydrolyzing an alkoxysilane which comprises adding sufficient water to hydrolyze at least one alkoxy group, optionally, in the presence of acidic or basic catalysts.

Adhesion promoter and self-priming arylcyclobutene resin compositions

An oligomer, uncured polymer or cured polymer comprising the reaction product of one or more polyfunctional compounds containing two or more cyclopentadienone groups and at least one polyfunctional compound containing two or more aromatic acetylene groups wherein at least some of the polyfunctional compounds contain three or more reactive groups. Such oligomers and uncured polymers may be cured to form cured polymers which are useful as dielectrics in the microelectronics industry, especially for dielectrics in integrated circuits.

Growing community of inventors

Midland, MI, United States of America

Paul H Townsend, Iii