International Business Machines Corporation

Other

Paul H Smith, Jr

Richard John Lebel

Rock Nadeau

Theodore Gerard Van Kessel

Hemantha Kumar Wickramasinghe

Frederic Maurer

Hematha K Wickramasinghe

Fredrik Maurer

Eric Jeffrey White

Timothy Charles Krywanczyk

David C Thomas

Matthew D Moon

Martin Patrick O'Boyle

Matthew T Tiersch

Joel M Sharrow

Jeffrey Alan Brigante

Douglas Keith Sturtevant

Kenneth H Yao

Timothy Scott Bullard

Dean Allen Schaffer

Charles A McKinney

Clark D Reynolds

Michael S Lube

Thomas F Curran, Jr

Timothy J Rickard, Jr

Daniel D Desorcie

David J Fontaine

Thomas L Conrad

Hydrogen energy systems for obtaining hydrogen gas from a solid storage medium using controlled laser beams. Also disclosed are systems for charging/recharging magnesium with hydrogen to obtain magnesium hydride. Other relatively safe systems assisting storage, transport and use (as in vehicles) of such solid storage mediums are disclosed.

Hydrogen energy systems

Hydrogen energy systems for obtaining hydrogen gas from a solid storage medium using controlled photon and phonon sources. Additionally, structures of solid storage mediums, enhancements to interactions in the medium with photons and phonons, and manufacturing methods of the mediums are disclosed. Also disclosed are systems for charging/recharging magnesium with hydrogen to obtain magnesium hydride. Other relatively safe systems assisting storage, transport and use (as in vehicles) of such solid storage mediums are disclosed.

Hydrogen energy systems for obtaining hydrogen gas from a solid storage medium using controlled lasers. Also disclosed are systems for charging/recharging magnesium with hydrogen to obtain magnesium hydride. Other relatively safe systems assisting storage, transport and use (as in vehicles) of such solid storage mediums are disclosed.

An optical probe (and method) for measuring a surface in an environment containing a first substance, includes a light source for transmitting a light onto an area of the surface to obtain a measurement, a source of the first substance including one of a fluid and a gas for displacing a second substance from an area of the surface receiving the light, and a measuring device for receiving the light being reflected from the surface and for determining a measurement of the surface based upon the reflected light.

Method and apparatus for optical film measurements in a controlled environment

A device and method for providing precision alignment and support for an optical film measurement probe in the wafer rinse tank of a CMP polish tool. The device includes of a probe carrier, and spring loaded support guides attached to a support ring that supports and locates the mechanism in the rinse tank of the CMP tool. The probe carrier has multiple beveled bearing pads (three or more) that contact the rim of the rotating wafer chuck. Pressure from the chuck against these pads forces the probe carrier to maintain a fixed distance and orientation relative to the wafer while allowing the smooth rotation and motion of the wafer and chuck. Further, an integrated the wafer spray nozzles can be attached to the probe carrier that is located so as to minimize interference between wafer spraying and the probe carrier.

Support and alignment device for enabling chemical mechanical polishing rinse and film measurements

A recirculation mechanism is used to force slurry toward the center of a platen used for chemical-mechanical polishing. The recirulator captures the slurry that would otherwise be flung from a rotating platen because of centrifugal force. The captured slurry is forced upwardly away from the surface of the platen and toward the center of the platen to recycle the slurry.

Slurry recirculation in chemical mechanical polishing

A method of reworking copper metallurgy on semiconductor devices which includes selective removal of insulator, selective removal of copper, non-selective removal of copper and insulator followed by the redeposition of an insulating copper barrier layer and at least one metallurgical interconnect layer.

Method for reworking copper metallurgy in semiconductor devices

A structure and method for polishing a device include oscillating a carrier over an abrasive surface (the carrier bringing a polished surface of the device into contact with the abrasive surface, the oscillating allowing a portion of the polished surface to periodically oscillate off the abrasive surface), optically determining a reflective measure of a plurality of locations of the polished surface as the portion of the device oscillates off the abrasive surface and calculating depths of the locations of the polished surface based of the reflective measure.

Chemical mechanical polishing in-situ end point system

A system and method that integrates film thickness measurements with a chemical-mechanical polishing (CMP) spin-dry tool. By doing so, each wafer can be measured as it comes out of the previous CMP process. Thickness measurement feedback is provided, which controls processing of the wafer and also monitor operational status of a CMP polishing unit prior to completion of the wafer being polished, resulting in significant cost and cycle time reduction through the elimination of tool infrastructure and wafer handling by assuring proper tolerances of the CMP polishing unit are maintained.

Chemical-mechanical polishing system and method for integrated spin dry-film thickness measurement

An improved method of in-situ conditioning of a polishing pad for use with a stationary pad conditioner during chemical mechanical polishing is described. A polishing table having a polishing pad on its surface is rotated in a first direction during polishing of a semiconductor wafer. A polishing pad conditioner is adjustably attached to the rotating polishing table such that the conditioner is stationary in relation to the rotating polishing table. The conditioner has a roughened surface which is in contact with the polishing pad providing in-situ conditioning during polishing of a semiconductor wafer. After polishing of the semiconductor wafer, the polishing table is rotated in a second direction while the conditioner is still in contact with polishing pad. Rotating the polishing pad in a second direction dislodges the polishing debris clogging the roughened surface of the conditioner and redistributes CMP slurry. The roughened surface of the pad conditioner is refreshed allowing more effective conditioning of the polishing pad. Pad life is prolonged, polishing is stabilized, and the polish cycle time is reduced.

In-situ pad conditioning process for CMP

An apparatus for polishing a semiconductor wafer is provided which includes a wafer carrier having on its lower surface a non-uniform surface structure means to vary the force against a wafer during a polishing operation so that the polishing is enhanced and imparts a planar surface across the polished wafer. Preferred non-uniform surface structure means include use of a wafer carrier having on its lower surface a backing film having a first central portion having a predetermined compressibility and a second peripheral portion having a different compressibility than the first portion. Another non-uniform surface structure means to vary the force against the wafer comprises a wafer carrier having on its lower surface a raised circumferential region around the periphery of the carrier.

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Essex Junction, VT, United States of America

Paul H Smith, Jr