Bell Telephone Laboratories

Agere Systems Guardian Corp.

Paul H Citrin

Hans-Joachim Ludwig Gossmann

Bertram Schwartz

Chuan C Chang

David Anthony Muller

We have discovered that, contrary to conventional wisdom about forming DP defects, electrical saturation in highly doped 2D layers of Si does not occur. In accordance with one aspect of our invention, free-carrier concentrations in excess of about 7&times;10 cm can be attained in single crystal Si layers &dgr;-doped with a Group V element. In one embodiment, free-carrier concentrations in excess of about 2&times;10 cm are realized in single crystal Si that is &dgr;-doped with Sb. In another embodiment, the &dgr;-doped layer is formed as an integral part of an FET. In accordance with another aspect of our invention, an integrated circuit is fabricated by the steps of providing a single crystal silicon body and forming a doped layer in the body, characterized in that the processing steps form neither a significant amount of electrically inactive precipitates nor a significant number of deactivating dopant centers containing vacancies, and the layer is fabricated as a &dgr;-doped layer that is doped with a Group V element, so that the free-carrier density in the layer is in excess of about 7&times;10 cm , preferably in excess of about 2&times;10 cm .

Silicon semiconductor devices with &dgr;-doped layers

A technique for preparing stoichiometric group III-V compound semiconductor surfaces involves a repetitive anodizing and etching sequence in an aqueous solution of appropriate pH and a basic solution, respectively. Surfaces treated in the described manner evidence a correct surface stoichiometry and minimum carbon contamination.

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Westfield, NJ, United States of America

Paul H Citrin