Nutool, Inc.

Scp Global Technologies, Inc.

Novellus Systems Incorporated

Boise State University

Paul G Lindquist

Bulent Mehmet Basol

Cyprian Emeka Uzoh

Homayoun Talieh

Curtis R Olson

John J Rosato

Robert Newell Walters

Jane Fahrenkrug

A micropump includes a body with an inlet and an outlet defined therein. A channel connects the inlet to the outlet. The micropump further includes a magnetic shape memory (MSM) alloy positioned within the channel. The MSM alloy selectively forms a barrier between the inlet and the outlet. The micropump also includes an electrode and/or a transparent window positioned along a surface of the channel. A cavity is selectively formed within a surface of the MSM alloy due to a magnetic field. The cavity is selectively moveable between a first position adjacent to the inlet, a second position adjacent to the electrode and/or the transparent window, and a third position adjacent to the outlet, by altering the magnetic field. By altering a magnetic field applied to the MSM alloy, a fluid may be pumped from the inlet to the electrode and/or the transparent window where the fluid may be analyzed. The fluid may be subsequently pumped to the outlet.

Ferro-magnetic shape memory alloy microcavity fluid sensor

An apparatus which can control thickness uniformity during deposition of conductive material from an electrolyte onto a surface of a semiconductor substrate is provided. The apparatus has an anode which can be contacted by the electrolyte during deposition of the conductive material, a cathode assembly including a carrier adapted to carry the substrate for movement during deposition, and a conductive element permitting electrolyte flow therethrough. A mask lies over the conductive element and has openings permitting electrolyte flow. The openings define active regions of the conductive element by which a rate of conductive material deposition onto the surface can be varied. A power source can provide a potential between the anode and the cathode assembly so as to produce the deposition. A deposition process is also disclosed, and uniform electroetching of conductive material on the semiconductor substrate surface can additionally be performed.

Method for controlling thickness uniformity of electroplated layers

Semiconductor substrates, particularly metallized substrates such as partially processed wafers, are rinsed with an aqueous medium, preferably deionized water, which further contains an anti-corrosive chemical agent or agents selected so as to minimize corrosion of metals resulting from contact with the water. The amount of anti-corrosive chemical agent is maintained in a controlled manner at a predetermined level or within a predetermined range preferably the rinsing with aqueous medium containing anticorrosive chemical agent is also carried out for a specified time, followed by further rinsing with deionized water alone. The rinsing may be combined, either in the same vessel or in a different vessel, with a subsequent drying step, such as a drying process utilizing a drying vapor introduced into the rinse tank or into a downstream vessel. The drying vapor condenses on the surface of the semiconductor material and reduces the surface tension of residual process fluid, causing the residual process fluid to flow off the surface.

Process and system for rinsing of semiconductor substrates

Apparatus for controlling thickness uniformity of electroplated and electroetched layers

An apparatus capable of assisting in controlling an electrolyte flow and distribution of an electric field, a magnetic field, or an electromagnetic field in order to process a substrate is provided with improved fluid distribution. A support member having a top surface and a bottom surface contains at least one support member electrolyte channel. Each support member electrolyte channel forms a passage between the top surface and the bottom surface and allows the electrolyte to flow therethrough. A pad is attachable to the support member and contains at least one set of pad electrolyte channels also allowing for electrolyte flow therethrough to the substrate. Each support member electrolyte channel is connected to one set of pad electrolyte channels by fluid distribution structure. A method of assisting in control of the electrolyte flow and distribution of the electric field, the magnetic field, or the electromagnetic field, utilizing the apparatus, is also provided.

Method and apparatus employing pad designs and structures with improved fluid distribution

A conductivity cell for use in determining ionic concentrations in the gap between two semiconductor substrates or wafers. The wafer gap conductivity cell is composed of two flat electrodes separated by a fixed gap. The electrodes are fabricated from wafers of the same type and dimensions used as semiconductor device substrates. All or a portion of the surfaces of the wafer electrodes are coated with a conductive material. The wafer gap conductivity cell is placed in a wafer cassette or other suitable wafer holder, whose other slots are filled with wafers which are to be cleaned or subjected to another fabrication process. The cell can be used to characterize the processes used during the fabrication of semiconductor devices and assist in investigating the effect on the processes of different process vessel designs.

Growing community of inventors

Eagle, ID, United States of America

Paul G Lindquist