Wacker Chemie Ag

Wacker-chemie Gmbh

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag

Wacker Siltronic Gesellschaft F{umlaut Over (u)}r Halbleitermaterialien Ag

Paul Fuchs

Erich Tomzig

Wilfried Von Ammon

Konrad Mautner

Franz Koppl

Klaus Kaeppler

Dieter Weidhaus

Gerhard Staiger

Norbert Ellinger

Yuri Gelfgat

Manfred Boeck

Klaus Käppler

Manfred Böck

A method for the contamination-free heating of a highly pure gas to a temperature of from 300 to 1200&#xb0; C. involves passing the highly pure gas at a pressure of from 0.1 to 10 bar abs. over a highly pure solid which does not contaminate the gas, the solid being present in a highly pure container whose wall consists of a material which has a transparency of more than 85% for infrared rays and the container being irradiated by means of the infrared rays, the solid being heated thereby and the solid heating the gas.

Method and apparatus for the contamination-free heating of gases

Mixtures containing high boiling and low boiling components, at least one component being dissociatable into ions, are separated effectively by heating by passing an alternating electrical current through the mixture. The process is particularly effective in the workup of crude alkylchlorosilanes from the direct synthesis.

Method for evaporating components of a liquid

High boiling residue from the direct synthesis of alkylchlorosilanes are converted in large part to monosilanes by heating the residue by passage of alternating current in a pressurized reactor.

Method for producing alkyl chlorosilanes from the residues of the direct synthesis of alkyl chlorosilanes

The invention relates to a process for melting semiconductor material in a crucible which is located in a container, and is enclosed by a fixed heating device. The invention also relates to a heating device which is suitable for carrying out the process. The process is one wherein a heater of a displaceable heating device is lowered from a lock chamber above the container through an open shut-off valve into the container in the direction of the semiconductor material, and the semiconductor material is melted using the fixed heating device and the lowered heater. The heater is then raised back out of the container into the lock chamber after the semiconductor material has been melted. A door is provided in the lock chamber to allow the displaceable heater to be removed after the semiconductor material has been melted.

Process and heating device for melting semiconductor material

A process for producing a silicon single crystal by the Czochralski method, utilizes a heater which is intended for heating a silicon-filled crucible and is arranged below the crucible. The process has energy delivered to the melt at least some of the time inductively using a coiled heater arranged under the crucible. The heater is in the form of a wound coil.

Process for producing a silicon single crystal, and heater for carrying

A method and device for fragmenting semiconductor material, comprising at least two spaced-apart electrodes, which consist of the semiconductor material which is to be fragmented. Each electrode has a heating device. The electrodes pass high voltage current through the semiconductor material to fragment it. The device eliminates the risk of contanimation of the semiconductor material as compared with conventional methods.

Device and method for fragmenting semiconductor material

A method and device for heating silicon carrier bodies in a deposition reactor are by means of radiated heat. In this method, the carrier bodies are irradiated by means of a heat radiation device which emits radiation having a color temperature of at least 2000.degree. C.

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Schalchen, Austria

Paul Fuchs