Wisconsin Alumni Research Foundation

The University of Chicago

Tokyo Ohka Kogyo Co., Ltd.

Hgst Netherlands, B.v.

Alien Technology Corporation

Massachusetts Institute of Technology

Western Digital Technologies, Inc.

Cornell University

University of Minnesota

Yissum Research Development Company of the Hebrew University of Jerusalem Ltd.

Paul Franklin Nealey

Juan Jose De Pablo

Mark Stoykovich

Konstantinos C Daoulas

Marcus Muller

Huiman Kang

Akiya Kawaue

Ricardo Ruiz

Takehiro Seshimo

Ken Miyagi

Tasuku Matsumiya

Takaya Maehashi

Hitoshi Yamano

SangMin Park

Erik W Edwards

Xuanxuan Chen

Thomas R Albrecht

John Stephen Smith

Mark Alfred Hadley

Frank Steven Bates

Gordon S W Craig

Harun Solak

Francesco Cerrina

Juan J Depablo

Guoliang Liu

Monirosadat Sadati

Ye Zhou

Shengxiang Ji

Francois Detcheverry

Tushar S Jain

Xiao Li

XiaoMin Yang

Jose A Martinez-Gonzalez

Richard D Peters

Qiang Wang

Rui Zhang

Nicholas Lawrence Abbott

Karen K Gleason

Zhenqiang Ma

Christopher Kemper Ober

Elizabeth Ann Dobisz

Lei Wan

Hiroshi Yoshida

Michael Scott Arnold

Franco Cerrina

Roy Shenhar

Tzu-Hsuan Chang

Robert Michael Jacobberger

Lin Wang

Abelardo Ramirez-Hernandez

Sangwon Kim

Do Han Kim

Marcus Müller

Hyo Seon Suh

Kostas Daoulas

Priya Moni

SangOuk Kim

Junyan Dai

Shisheng Xiong

Yashuhiko Tada

Stable, macroscopic single-crystal chiral liquid crystal compositions are described. The compositions include a single-crystal chiral liquid crystal material on a patterned surface. The patterned surface seeds a particular crystallographic orientation at the substrate-liquid crystal interface. Also described are methods of forming the single-crystal chiral liquid crystal compositions.

Blue phases on patterned surfaces

Disclosed is a method for the fabrication of polymeric topcoat via initiated chemical vapor deposition (iCVD) or photoinitiated chemical vapor deposition (piCVD) in conjunction with directed self-assembly (DSA) of block copolymers to generate high resolution patterns. A topcoat deposited by iCVD or piCVD allows for conformal, ultra-thin, uniform, pinhole-free coatings. iCVD or piCVD topcoat enables the use of a diversity of block copolymer (BCP) materials for DSA and facilitates the direct and seamless integration of the topcoats for a pattern transfer process.

Method of forming topcoat for patterning

Methods to pattern substrates with dense periodic nanostructures that combine top-down lithographic tools and self-assembling block copolymer materials are provided. According to various embodiments, the methods involve chemically patterning a substrate, depositing a block copolymer film on the chemically patterned imaging layer, and allowing the block copolymer to self-assemble in the presence of the chemically patterned substrate, thereby producing a pattern in the block copolymer film that is improved over the substrate pattern in terms feature size, shape, and uniformity, as well as regular spacing between arrays of features and between the features within each array compared to the substrate pattern. In certain embodiments, the density and total number of pattern features in the block copolymer film is also increased. High density and quality nanoimprint templates and other nanopatterned structures are also provided.

Density multiplication and improved lithography by directed block copolymer assembly

A resin composition for forming a phase-separated structure, including: a block copolymer, and an ion liquid containing a compound (IL) having a cation moiety and an anion moiety, the cation moiety of the compound (IL) having a dipole moment of 3 debye or more.

Resin composition for forming a phase-separated structure, and method of producing structure containing phase-separated structure

Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.

Atomic layer chemical patterns for block copolymer assembly

A resin composition for forming a phase-separated structure, including: a block copolymer, and an ion liquid containing a compound (IL) having a cation moiety and an anion moiety, the energy of the LUMO of the cation moiety being &#x2212;4.5 eV or more, and the energy difference between the LUMO and the HOMO of the cation moiety being 10.0 ev or more, or the Log P value of the anion moiety being 1 to 3.

A resin composition for forming a phase-separated structure, including a block copolymer, and an ion liquid containing a compound having a cation moiety and an anion moiety, the anion moiety being represented by general formula (a1), (a2) or (a3), in which X&#x2033; represents an alkylene group of 2 to 6 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; Y&#x2033; and Z&#x2033; each independently represents an alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; R&#x2033; represents an alkyl group of 1 to 5 carbon atoms in which at least one hydrogen atom is optionally substituted with a fluorine atom, m represents an integer of 1 to 6, and n represents an integer of 0 to 5, provided that m+n=6. 

Provided are methods of fabricating thin film structures that involve assembling block copolymer materials in the presence of condensed phase surfaces on both sides of the thin film, at least one of which is a chemically patterned surface configured to direct the assembly of the block copolymer material. According to various embodiments, the other of the condensed phase surfaces can be a chemically homogenous surface or a chemically patterned surface. Also provided are structures, morphologies, and templates formed in the domain structure of block copolymer materials. In certain embodiments, complex 3-D morphologies and related structures not present in bulk block copolymer materials are provided.

Directed assembly of block copolymer films between a chemically patterned surface and a second surface

Provided herein are methods of formulating and engineering block copolymer (BCP) systems for directed self-assembly (DSA) processes. In some embodiments, the methods involve engineering a BCP material based on the interaction parameter (&#x3c7;) of the material and the surface and/or interaction energies of its constituent blocks. Also provided are novel block BCP materials that can be used in DSA techniques. In some embodiments, the BCP systems described herein have micro-phase separating blocks, with at least one block including multiple types of repeat units. Also provided are structures formed by DSA, including structures having a sub-20 nm dimension. Applications included nanolithography for semiconductor devices, fabrication of cell-based assays, nanoprinting, photovoltaic cells, and surface-conduction electron-emitter displays.

Block copolymer materials for directed assembly of thin films

Methods of fabricating complex three-dimensional structures on patterned substrates and related compositions are provided. The methods involve depositing on the substrate a block copolymer material that is 'mismatched' to the substrate pattern, and then ordering the material to form a complex three-dimensional structure. According to various embodiments, the copolymer material mismatches the substrate pattern in that the symmetry and/or length scale of its bulk morphology differs from that of the pattern. When ordered, a balance between the physics that determines the bulk block copolymer morphology and the physics that determines the substrate surface interfacial interactions results in a thermodynamically stable complex three-dimensional film that varies in a direction perpendicular to the substrate and has a morphology that differs from its bulk morphology.

Fabrication of complex three-dimensional structures based on directed assembly of self-assembling materials on activated two-dimensional templates

Provided herein are block copolymer thin film structures and methods of fabrication. The methods involve directing the assembly of ABA triblock copolymers such that desired features are formed by domains of the assembled ABA triblock copolymer. In some embodiments, an ABA triblock copolymer is directed to assemble by a chemical pattern. Chemical patterns with periods much different than the natural period of the ABA triblock copolymer may be used to direct assembly of the ABA triblock copolymer.

Patterning in the directed assembly of block copolymers using triblock or multiblock copolymers

Provided herein are block copolymer thin film structures and methods of fabrication. Aspects described herein include methods of directed self-assembly of block copolymers on patterns using solvent annealing, and the resulting thin films, structures, media or other compositions. According to various embodiments, solvent annealing is used direct the assembly of block copolymers on chemical patterns to achieve high degrees of pattern perfection, placement of features at the precision of the lithographic tool used to make the chemical pattern, improved dimensional control of features, improved line edge and line width roughness, and resolution enhancement by factors of two to four or greater.

Solvent annealing block copolymers on patterned substrates

The present invention provides block copolymers comprising at least one covalent polymer block and at least one supramolecular polymer block, processes for their preparations and uses thereof.

Quasi-block copolymer melts, processes for their preparation and uses thereof

Growing community of inventors

Madison, WI, United States of America

Paul Franklin Nealey