Kla-tencor Technologies Corporation

Kla Tencor Corporation

Paul Frank Marella

James Norman Wiley

Ellis Chang

Carl Hess

Sagar A Kekare

Sterling G Watson

William Volk

Sharon McCauley

Tao-Yi Fu

Shiow-Hwei Hwang

Steve R Lange

Nat Ceglio

David Lewis Adler

Mark Armstrong McCord

Marian Mankos

Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the water in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

Methods and systems for inspection of wafers and reticles using designer intent data

Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

Methods and systems for inspection of a specimen using different parameters are provided. One computer-implemented method includes determining optimal parameters for inspection based on selected defects. This method also includes setting parameters of an inspection system at the optimal parameters prior to inspection. Another method for inspecting a specimen includes illuminating the specimen with light having a wavelength below about 350 nm and with light having a wavelength above about 350 nm. The method also includes processing signals representative of light collected from the specimen to detect defects or process variations on the specimen. One system configured to inspect a specimen includes a first optical subsystem coupled to a broadband light source and a second optical subsystem coupled to a laser. The system also includes a third optical subsystem configured to couple light from the first and second optical subsystems to an objective, which focuses the light onto the specimen.

Methods and systems for inspection of a specimen using different inspection parameters

One embodiment relates to a method of inspecting a substrate using electrons. Mirror-mode electron-beam imaging is performed on a region of the substrate at multiple voltage differences between an electron source and a substrate, and image data is stored corresponding to the multiple voltage differences. A calculation is made of a measure of variation of an imaged aspect of a feature in the region with respect to the voltage difference between the electron source and the substrate. Other embodiments and features are also disclosed.

Electrical process monitoring using mirror-mode electron microscopy

Systems and methods for repairing defects on a specimen are provided. A method may include processing a specimen, detecting defects on the specimen, and repairing one or more of the defects. An additional method may include detecting defects on a specimen, repairing one or more of the defects, and inspecting the specimen to detect defects remaining on the specimen subsequent to repair. A system may include a process chamber, a measurement device configured to detect defects on a specimen, and a repair tool configured to repair one or more of the defects detected on the specimen. An additional system may include a measurement device, a repair tool, and an inspection tool configured to detect defects remaining on the specimen subsequent to repair. The systems may also include a processor configured to alter a parameter of an instrument coupled to the repair tool in response to output from the measurement device.

Systems and methods for closed loop defect reduction

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San Jose, CA, United States of America

Paul Frank Marella