Cambridge Silicon Radio Limited

Paul Egan

Simon Chang

Ian Michael Sabberton

A SRAM memory element comprises an influencing element which sets the state of the memory cells within the memory element on start-up to defined values. These defined values are set at the design stage such that on start-up the volatile memory contains firmware or other data. Dependent upon the implementation of the influencing element, the values of stored in the memory cells may be fixed or may subsequently be overwritten during operation of the device. The memory cell may comprise two cross-coupled inverters and the influencing element comprises at least one transistor arranged to connect the input to one of the inverters to ground or a power supply rail when voltage is applied to a controlling node of the transistor.

Memory design

An electrical circuit comprises a source of an interferer signal; at least one component configured for using the signal; at least two electrically parallel conductive paths by which the signal can pass between the source and each of the at least one components; and a signal path selector configured to selectively enable the signal to pass from the source to the component by any of the at least two conductive paths and to, when one of the paths is enabled to carry the signal, disable each of the other at least two paths from carrying the signal.

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Edinburgh, United Kingdom

Paul Egan