USA As Represented by Secretary of the Navy

Paul E Hunter

Leonard J Schwee

A nonvolatile random access memory is formed by thin permalloy shaped into 'wiggle' patterns and magnetized to establish a plurality of memory cells arranged into an array. Magnetic domain walls are formed at apexes of the 'wiggle' pattern in each memory cell after a predetermined magnetic field is applied along the hard axis of the memory cell array by magnetization so aligned. Row address lines for reading and writing into the memory cells and column address lines for writing into the memory cells are provided to conduct currents through each column of the array for magnetoresistance readout.

Crosstie random access memory element and a process for the fabrication

A thin film vector magnetometer is configured to produce an output that ves linearly with the component of an externally applied magnetic field in the plane of a thin film chip portion thereof along a predefined sensitivity axis. The sensitivity and linear dynamic range of the thin film vector magnetometer are intimately related to each other through a bias field supplied by a bias magnet portion of the device. The bias field also defines the sensitivity axes of the magnetometer which is orthogonal to the unidirectional bias field supplied by the bias magnet.

Thin film vector magnetometer

A thin film vector magnetometer is configured to produce an output that varies linearly with the component of an externally applied magnetic field in the plane of a thin film chip portion thereof along a predefined sensitivity axis. The sensitivity and linear dynamic range of the thin film vector magnetometer are intimately related to each other through a bias field supplied by a bias magnet portion of the device. The bias field also defines the sensitivity axis of the magnetometer which is orthogonal to the unidirectional bias field applied by the bias magnet.

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Burtonsville, MD, United States of America

Paul E Hunter