Applied Materials, Inc.

Paul E Fisher

Li-Qun Xia

Ellie Y Yieh

Frederic Gaillard

Zheng Yuan

Michael Santiago Cox

Colin John Dickinson

Monique McIntosh

Margaret Gotuaco

Yutaka Tanaka

Srinivas D Nemani

Juan Carlos Rocha-Alvarez

Jian Li

David Walter Groechel

Paul Brillhart

Paul Zachary Wirth

Jay J Jung

Youssef A Loldj

Mehran Moalem

Ilias Iliopoulos

Andreas Neuber

Mohsin Waqar

Chidambara A Ramalingam

Todd J Brill

Dorothea Buechel-Rimmel

Katherine Woo

Shinnosuke Kawaguchi

Charles Gregory Potter, Sr

Joshua Putz

Jennifer M Hillman

Joseph J Farah

Implementations disclosed describe an inspection device capable of being transferred by a robot blade into a processing chamber of a manufacturing machine, the inspection device comprising an optical sensor to detect light reflected from a target located within the processing chamber, wherein the optical sensor is to output, to a processing device, a signal representative of a state of a region of a surface of the target.

Methods and systems of optical inspection of electronic device manufacturing machines

Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The systems may include a leveling apparatus seated on the substrate support. The leveling apparatus may include a plurality of piezoelectric pressure sensors.

Semiconductor substrate support leveling apparatus

A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH, HO, H, NF, SF, F, HCl, HF, Cl, and HBr. Representative condensing abating reagents include, for example, H, HO, O, N, O, CO, CO, NH, NO, CH, and combinations thereof.

Plasma abatement of compounds containing heavy atoms

Methods and apparatus for controlling a processing system are provided herein. In some embodiments, a method of controlling a processing system may include operating a vacuum pump coupled to a process chamber at a first baseline pump idle speed selected to maintain the process chamber at a pressure equal to a first baseline pump idle pressure; monitoring the pressure in the process chamber while operating the vacuum pump at the first baseline pump idle speed; and determining whether the first baseline pump idle pressure can be maintained in the process chamber when the vacuum pump is operating at the first baseline pump idle speed.

Method and apparatus for controlling a processing system

A method and apparatus for processing a substrate to form a feature in low k dielectric materials. One aspect of the invention provides a method for processing a substrate including forming a feature definition in a dielectric material deposited on a surface of a substrate, depositing one or more conductive materials to fill at least a portion of the feature definition, planarizing the substrate surface to expose the dielectric material, removing at least a portion of the dielectric material, and depositing a low k dielectric material.

Integration scheme for dual damascene structure

A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.

Silicon carbide cap layers for low dielectric constant silicon oxide layers

Pocket shaped handbag

A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxygen-containing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.

Method of depositing organosillicate layers

A device for measuring pressure at several locations in a processing chamber under dynamic Conditions, i.e. when gas is flowing into and/or out of the chamber. A substrate has a plurality of pressure sensors electrically coupled to a measurement instrument. Conditions are established within a processing chamber to determine the effects of various process parameters, such as gas flow, on local pressures, and the local pressures are measured. The test conditions may simulate a process or may be standard test conditions to evaluate chamber configurations or hardware. The pressure test substrate may be calibrated under static conditions to improve the accuracy of the pressure readings.

Wafer to measure pressure at a number of points in a process chamber

A device for measuring pressure at several locations in a processing chamber under dynamic conditions, i.e. when gas is flowing into and/or out of the chamber. A substrate has a plurality of pressure sensors electrically coupled to a measurement instrument. Conditions are established within a processing chamber to determine the effects of various process parameters, such as gas flow, on local pressures, and the local pressures are measured. The test conditions may simulate a process or may be standard test conditions to evaluate chamber configurations or hardware. The pressure test substrate may be calibrated under static conditions to improve the accuracy of the pressure readings.

Device for measuring pressure in a chamber

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Los Altos, CA, United States of America

Paul E Fisher