Chorus, LLC

Adc Telecommunications, Inc.

Applied Epi, Inc.

Paul E Colombo

Scott W Priddy

Mark McElhinney

Robert F Donadio

Kevin J Hubbard

Scott Wayne Priddy

James E Tolan

An integrated phase separator for use in an ultra high vacuum system, for example, a molecular beam epitaxy system, is described. The vacuum chamber has a cryogenic panel disposed therein. The cryogenic panel includes a cryogenic shroud region and a phase separator region. Liquid nitrogen is introduced into the cryogenic panel via an inlet line. As the liquid nitrogen warms and vaporizes, nitrogen vapor rises within the shroud. The phase separator region within the cryogenic panel provides a near atmospheric pressure vapor barrier over the liquid nitrogen so that the nitrogen vapor may escape smoothly through the outlet of the panel, without forming gas bursts. Also, the phase separator region is vacuum jacketed to prevent cryogenic shroud surface temperature changes due to variations in liquid nitrogen levels, thereby increasing the cryogenic shroud's pumping stability. In one embodiment, used in molecular beam epitaxy (MBE), the cryopanel is divided into first and second cooling chambers. The first cooling chamber contains liquid nitrogen and surrounds the substrates to be coated, while the second cooling chamber contains a different fluid such as water, and surrounds the effusion cells so as to dissipate heat generated during the operation of effusion cells.

Dual chamber cooling system with cryogenic and non-cryogenic chambers for ultra high vacuum system

An apparatus and method for batch processing semiconductor lasers producing substantially contamination free laser bar end surfaces for optimal growth of end surface layers are provided. The method includes loading a laser cell comprising a plurality of laser bars and an empty cassette capable of holding a plurality of laser bars into a cleaving chamber and pumping the cleaving chamber down to a desired pressure. Next, a cleaving cycle is performed in which an end laser bar is cleaved off the laser cell. The laser bar is deposited in the cassette, while the laser cell is positioned for a subsequet operation. The cleaving cycle repeats until a plurality of laser bars are cleaved off the laser cell and loaded into the cassette. The cassette is then moved into a deposition chamber where a layer of material is deposited on at least one end surface of all of the laser bars in the cassette.

Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers

A semiconductor laser with improved device characteristics and novel protection against high power output degradation is disclosed. The laser comprises a plurality of layers deposited on a substrate, including an active layer with neighboring cladding layers, so as to define a waveguide, said waveguide having opposing end surfaces. A single crystal mirror layer is formed directly on at least one of the end surfaces, providing improved device characteristics and a longer life time for high power output applications. The mirror layer has sufficient thickness and is made of a material having a refractive index sufficiently different from that of the active layer to substantially modify the reflectivity of the first end surface. In a preferred embodiment, the laser is an AlGaAs laser designed to operate at 980 nm, and the single crystal mirror layer comprises a large band gap material, such as ZnSe, MgS, or BeTe.

Semiconductor lasers having single crystal mirror layers grown directly on facet

An apparatus and method for batch processing semiconductor lasers producing substantially contamination free laser bar end surfaces for optimal growth of end surface layers are provided. The method includes loading a laser cell comprising a plurality of laser bars and an empty cassette capable of holding a plurality of laser bars into a cleaving chamber and pumping the cleaving chamber down to a desired pressure. Next, a cleaving cycle is performed in which an end laser bar is cleaved off the laser cell. The laser bar is deposited in the cassette, while the laser cell is positioned for a subsequent operation. The cleaving cycle repeats until a plurality of laser bars are cleaved off the laser cell and loaded into the cassette. The cassette is then moved into a deposition chamber where a layer of material is deposited on at least one end surface of all of the laser bars in the cassette.

An integrated phase separator for use in an ultra high vacuum system, for example, a molecular beam epitaxy system, is described. The vacuum chamber has a cryogenic panel disposed therein. The cryogenic panel includes a cryogenic shroud region and a phase separator region. Liquid nitrogen is introduced into the cryogenic panel via an inlet line. As the liquid nitrogen warms and vaporizes, nitrogen vapor rises within the shroud. The phase separator region within the cryogenic panel provides a near atmospheric pressure vapor barrier over the liquid nitrogen so that the nitrogen vapor may escape smoothly through the outlet of the panel, without forming gas bursts. Also, the phase separator region is vacuum jacketed to prevent cryogenic shroud surface temperature changes due to variations in liquid nitrogen levels, thereby increasing the cryogenic shroud's pumping stability.

Integrated phase separator for ultra high vacuum system

This invention is a sublimating and cracking apparatus for producing a beam of molecules to be deposited on a substrate, and an apparatus which is particularly useful with phosphorus as the source material. In the phosphorus effusion cell of this invention, a vacuum jacket encloses and supports a red phosphorus crucible, a condensing crucible for white phosphorus and a connecting tube within a vacuum space. In use, red phosphorus is first transformed and deposited as white phosphorus in the condensing chamber. The white phosphorus is then directed to a cracker section where it is cracked and subsequently directed to the substrate.

Phosphorus effusion source

A molecular beam epitaxy (MBE) growth chamber which provides separate longitudinally oriented isolation chambers for each effusion cell thereof. Wall structures bounding each isolation chamber are hollow to receive cryogenic material and are in fluid communication with each other. Each isolation chamber has an interior and exterior portal which provide fluid communication between the isolation chambers and the space inside the MBE chamber. An effusion cell is mounted in the interior portal to direct a portion of effusion material through the interior portal in a beam toward a substrate in the MBE chamber. Another portion of the effusion material is directed along the inside of the isolation chamber toward a sensor which controls the effusion cell. The isolation chambers facilitate measurement and control of individual materials effused from separate cells even when those cells are operated simultaneously.

Molecular beam epitaxy isolation tube system

A unibody, monolithic, one-piece negative draft crucible for a MBE effusion cell. The crucible maximizes capacity, uniformity and long term flux stability, and minimizes oval defects, depletion effects, and short term shutter-related flux transients. The invention also provides a method and mandrel apparatus for making a unibody containment structure, such as a crucible formed of PBN, having a negative draft, via chemical vapor deposition.

MBE deposition method employing effusion cell having a unibody crucible

A unibody, monolithic, one-piece negative draft crucible for an MBE effusion source. The crucible maximizes capacity, uniformity and long term flux stability, and minimizes oval defects, depletion effects, and short term shutter-related flux transients. The invention also includes an effusion source employing such a crucible, as well as a method and mandrel apparatus for making a unibody containment structure, such as a crucible formed of PBN, having a negative draft, via chemical vapor deposition.

Unibody crucible and effusion source employing such a crucible

Unibody crucible and effusion cell employing such a crucible

A method of manufacturing a tri-plate vacuum-sealed field emission type display facilitates mass production ex-situ. The method is based on a plate including an anode plate, a backing plate including at least one sealed access orifice, and a cathode/substrate plate secured between the anode plate and the backing plate. The cathode/substrate plate is vented in the active area, with a multitude of pass-through apertures, each aperture being conically shaped to optimize uninterrupted travel of damaging gas molecules to a getter located on the opposite side. Before sealing the access orifice in the backing plate, the orifice is used to decontaminate the inside of the display with a cleaning gas and to insert a granule form of getter.

Field emission display arrangement with improved vacuum control

An atomic hydrogen source. The source has an elongated cylindrical structure with proximal and distal or inner and outer ends. A head structure is disposed at the proximal end for communicative connection with electrical power, gas, temperature control and related systems. A mounting flange is disposed along the length of the source for connection with an MBE or other apparatus. A tube structure is disposed at the distal end for extension into the apparatus. The tube structure includes gas and power conduction elements, including a high temperature resistive filament for cracking gas.

Growing community of inventors

White Bear Lake, MN, United States of America

Paul E Colombo