Kla Tencor Corporation

Paul Douglas MacDonald

Mason L Freed

Randall S Mundt

Costas J Spanos

Andrew Beers

Michael D Welch

Hong Xiao

Robert M Danen

Philip Measor

Dean Hunt

Michiel V P Krüger

Reverse decoration can be used to detect defects in a device. The wafer can include NAND stacks or other devices. The defect can be a channel bridge, a void, or other types of defects. Reverse decoration can preserve a defect and/or can improve defect detection. A portion of a layer may be removed from a device. A layer also may be added to the device, such as on the defect, and some of the layer may be removed.

Reverse decoration for defect detection amplification

A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and may include a transducer coupled to the at least one sensing element. The transducer can be configured to receive a signal from the sensing element and convert the signal into a second signal for input to the information processor.

Methods of and apparatuses for measuring electrical parameters of a plasma process

One embodiment relates to a method of reviewing defects using a scanning electron microscope (SEM). A defect location having a defect for review is selected, and the SEM is configured to be in a first imaging configuration. The selected defect location is imaged using the SEM to generate a first SEM image of the selected defect location. A determination is made as to whether the defect is visible or non-visible in the first SEM image. If the defect is non-visible in the first SEM image, then the SEM is configured to be into a second imaging configuration, the selected defect location is imaged using the SEM to generate a second SEM image of the selected defect location, and a further determination is made as to whether the defect is visible or non-visible in the second SEM image. Other embodiments, aspects and features are also disclosed.

Methods and apparatus to review defects using scanning electron microscope with multiple electron beam configurations

Methods of and apparatuses for maintenance, diagnosis, and optimization of processes

A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and at least one transducer coupled to the at least one sensing element. The transducer is configured so as to receive a signal from the sensing element and converting the signal into a second signal for input to the information processor.

One aspect of the present invention is a method of monitoring processes, optimizing processes, and diagnosing problems in the performance of a process tool for processing a workpiece. Another aspect of the present invention is a system configured for monitoring processes, optimizing processes, and diagnosing problems in the performance of a process tool for processing a workpiece. One embodiment of the present invention includes a software program that can be implemented in a computer for optimizing the performance of a process tool for processing a workpiece.

One or more problems related to processing workpieces using processes that involve optical radiation are presented along with solutions to one or more of the problems. One embodiment of the invention comprises a sensor apparatus for collecting optical radiation data representing one or more process conditions used for processing a workpiece. In a further embodiment, the sensor apparatus is also configured for measuring data other than optical radiation.

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Tracy, CA, United States of America

Paul Douglas MacDonald