International Business Machines Corporation

Other

Sematech, Inc.

Paul Daniel Kirsch

Michael Patrick Chudzik

Toshiharu Furukawa

Oleg Gluschenkov

Ravikumar Ramachandran

Mark J Hurley

Kristen Scheer

Jeremy John Kempisty

Suri G Hedge

Lance Genicola

Anthony I Chou

Joseph Francis Shepard, Jr

Katsunori Onishi

David Gilmer

Chang Yong Kang

Anthony I-Chih Chou

Byoung Hun Lee

Akihisa Sekiguchi

Sangduk Park

Joel Barnett

Chanro Park

Heemyoung Park

Capacitors, systems, and methods are disclosed. In one embodiment, the capacitor includes a first electrode. The capacitor may also include a first insulator layer having a positive VCC adjacent to the first electrode. The capacitor may further include a second insulator layer having a negative VCC adjacent to the first insulator layer. The capacitor may also include a third insulator layer having a positive VCC adjacent to the second insulator layer. The capacitor may also include a second electrode adjacent to the third insulator layer.

Capacitors, systems, and methods

A transistor with a gate stack having a metal electrode and a method for forming the same. The method includes providing a structure which includes (a) a substrate, (b) a gate dielectric layer on the substrate, and (c) a gate layer on the gate dielectric layer. The gate layer includes an oxidized layer. The oxidized layer comprises an oxidized material. Then, the structure is exposed to a first plasma resulting in removal of oxygen atoms from molecules of the oxidized material.

Transistors with gate stacks having metal electrodes

A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.

Method of monitoring introduction of interfacial species

A pneumatic tool () for impacting a workpiece () is provided. The tool () comprises a casing () defining a chamber (). A piston () is slidable within the chamber () along an operational axis (A). An exhaust valve () controlled by a pilot valve () slides the piston () by selectively introducing and releasing pressurized fluid into and out from the chamber (). The pilot valve () includes a valve housing () defining a pilot chamber () with a plunger () slidable in the pilot chamber (). The pilot valve () actuates the tool () by quickly releasing pressurized fluid from the exhaust valve () to atmosphere. The pilot valve () includes a spring-biased annular seal () that is releasable from a poppet seat () to perform this function.

Pilot valve for a pneumatic tool

Gate oxides having different thicknesses are formed on a semiconductor substrate by forming a first gate oxide on the top surface of the substrate, forming a sacrificial hard mask over a selected area of the first gate oxide; and then forming a second gate oxide. A first poly layer may be formed on the first gate oxide, under the hard mask. After the hard mask is removed, a second poly layer may be formed over the second gate oxide and over the first poly layer. This enables the use of high-k dielectric materials, and the first gate oxide can be thinner than the second gate oxide.

Forming gate oxides having multiple thicknesses

A pneumatic tool () for impacting a workpiece () is provided. The tool () comprises a casing () defining a chamber (). A piston () is slidable within the chamber () along an operational axis (A). An exhaust valve (), controlled by a pilot valve (), slides the piston () by selectively introducing and releasing pressurized fluid into and out from the chamber (). A tool bit () is slidable within the chamber () to impact the workpiece (). Kinetic energy is transferred to the tool bit () from the piston () via an impact from the piston () as the piston () slides within the chamber (). A shock absorbing valve () includes a floating collar () that is slidable along the casing () between two seal rings (). A handle () is mounted to the floating collar (). The floating collar () reciprocates along the casing () as fluid envelopes () are exposed to atmosphere in an alternating manner through exhaust ports () in the floating collar () to reduce pressure in the fluid envelopes () thereby reducing shock to a user grasping the handle ().

Shock absorbing valve for a pneumatic tool

A pneumatic tool () for impacting a workpiece () is provided. The tool () comprises a casing () defining a chamber (). A piston () is slidable within the chamber () along an operational axis (A). An exhaust valve () controlled by a pilot valve () slides the piston () by selectively introducing and releasing pressurized fluid into and out from the chamber (). A tool bit () is slidable within the chamber () to impact the workpiece (). Kinetic energy is transferred to the tool bit () from the piston () via an impact from the piston () as the piston () slides within the chamber (). An energy absorbing mechanism () reduces the kinetic energy of the tool bit () after impact by the piston (). The energy absorbing mechanism comprises a sleeve () that slides along the casing () and first () and second () pressure chambers that dissipate the kinetic energy of the tool bit () in multiple stages.

Pneumatic tool

Methods for preparing a silicon oxynitride layer where the silicon oxynitride layer is deposited atop a substrate and have a low concentration of nitrogen at the interface of the silicon oxynitride layer and the substrate. The silicon oxynitride layer is formed by pulsing at least one interface precursor onto a substrate, where said substrate chemisorbs a portion of said at least one interface precursor to form a monolayer of said at least one interface precursor; and pulsing a nitrogen-containing precursor onto said substrate containing said monolayer of interface precursor, where said monolayer of said at least one interface precursor chemisorbs a portion of said nitrogen-containing precursor to form a monolayer of said nitrogen-containing precursor. The interface precursor includes oxygen-containing or silicon-containing precursor gasses.

Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric

Method of monitoring introduction on interfacial species

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Fishkill, NY, United States of America

Paul Daniel Kirsch