Qorvo Us, Inc.

Rf Micro Devices, Inc.

Paul D Jones

Chris Levesque

David E Jones

Terry J Stockert

William David Southcombe

Scott Yoder

Anthony Puliafico

A radio frequency (RF) switch semiconductor die and an RF supporting structure are disclosed. The RF switch semiconductor die is attached to the RF supporting structure. The RF switch semiconductor die has a first edge and a second edge, which may be opposite from the first edge. The RF supporting structure has a group of alpha supporting structure connection nodes, which is adjacent to the first edge; a group of beta supporting structure connection nodes, which is adjacent to the second edge; and an alpha AC grounding supporting structure connection node, which is adjacent to the second edge. When the group of alpha supporting structure connection nodes and the alpha AC grounding supporting structure connection node are active, the group of beta supporting structure connection nodes are inactive.

Multiband RF switch ground isolation

Radio Frequency (RF) signal conditioning circuitry, which includes RF detection circuitry and RF attenuation circuitry is disclosed. The RF detection circuitry receives and detects an RF sample signal to provide an RF detection signal. The RF attenuation circuitry has an attenuation circuitry input, and receives and attenuates the RF sample signal via the attenuation circuitry input to provide an attenuated RF signal. The RF attenuation circuitry presents an attenuation circuitry input impedance at the attenuation circuitry input. The attenuated RF signal and the RF detection signal are provided concurrently.

Combined RF detector and RF attenuator with concurrent outputs

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Center Point, IA, United States of America

Paul D Jones