Agilent Technologies, Inc.

Avago Technologies General IP (singapore) Pte. Ltd.

Avago Technologies Wireless IP (singapore) Pte. Ltd.

Avago Technologies International Sales Pte. Limited

Avago Technologies Wireless Ip, Pte. Ltd.

Avago Wireless IP Pte Ltd

Paul D Bradley

Richard C Ruby

John Dwight Larson, Iii

Michael Louis Frank

Domingo A Figueredo

Tiberiu Jamneala

Shen Ye

David A Feld

Yury Oshmyansky

Hongjun Feng

Alexandre Shirakawa

Stefan Bader

Ronald Shane Fazzio

Andriy Yatsenko

Kevin J Grannen

Chris Feng

Martin Handtmann

John D Larson

Lueder Elbrecht

Hongya Xu

Kun Wang

Jeesu Kim

Dariusz Burak

John Choy

Young Kwon

Robert Thalhammer

Won Kyu Kim

R Shane Fazzio

Tina L Lamers

Martin Fritz

Benjamin M Yu

Donald M Lee

Mohammad Ardehali

Ji-Fuh Liang

Steve Gilbert

Thomas Faust

Ivan Ionash

Donald E Lee

Reed Parker

Hongiun Feng

Daniel S Lam

Dominguo Figueredo

John D Iii Larson

A resonator may include a first electrode, a second electrode, and a piezoelectric material between the first electrode and the second electrode, where the piezoelectric material is formed by fabricating the piezoelectric material with a compression axis vector (C-axis vector) oriented along a first direction and applying an electric field across the piezoelectric material to modify a direction of the C-axis vector to be oriented along a second direction. The second direction may be antiparallel to the first direction.

Resonator with intrinsic second harmonic cancellation

A BAW resonator comprises: a substrate comprising an acoustic reflector; a first electrode disposed over the acoustic reflector, and comprising a first electrode layer comprising a comparatively high acoustic impedance material, and a second electrode layer comprising a comparatively low acoustic impedance; a piezoelectric layer disposed over the second electrode layer; and a second electrode disposed over the piezoelectric layer, and comprising a third electrode layer comprising the low acoustic impedance, and a fourth electrode layer comprising the comparatively high acoustic impedance material and being disposed directly on the piezoelectric layer. A total thickness of an acoustic stack of the BAW resonator is approximately &#x3bb;/2, where &#x3bb; is a wavelength corresponding to a thickness extensional resonance frequency of the BAW resonator.

Bulk acoustic wave resonators having low atomic weight metal electrodes

A device combines filter circuits to be connected to an antenna, enabling carrier aggregation for wireless communications over multiple RF frequency bands in different operational environments. The device includes first, second and third filter circuits having first, second and third matching networks and one or more first, second and third band pass filters with corresponding passbands, respectively. The device further includes multiple individual matching networks not dedicated to any of the first, second or third filter circuits, and a multi-state switch configured to provide different filter circuit combinations by selectively connecting at least two of the first, second and third filter circuits, respectively, and at least one individual matching network of the multiple matching networks. Each filter circuit combination includes a combined matching network having at least two of the first, second and third matching networks and the at least one individual matching network.

Switched multiplexer device selectively connecting multiple filter circuits to common node for carrier aggregation

A tunable BAW filter device operating in an allocated channel of a predetermined frequency band includes a voltage source and multiple BAW resonators. The voltage source selectively provides non-zero DC bias voltage based on a location of the allocated channel within the frequency band. Each BAW resonator has a resonance frequency, and includes a bottom electrode, a piezoelectric layer and a top electrode disposed over the piezoelectric layer, the top electrode being electrically connected to the voltage source via a resistor. The voltage source is activated, applying the non-zero DC bias voltage to the top electrode of each BAW resonator, when the location of the allocated channel is near an upper or lower corner of the frequency band. The resonance frequency of each BAW resonator is shifted in response to the non-zero DC bias voltage toward a center of the frequency band, improving insertion loss of the BAW filter device.

Tunable bulk acoustic resonator device with improved insertion loss

An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides. At least one of the sides of the second electrode comprises a cantilevered portion. A piezoelectric layer is disposed between the first and second electrodes. A bridge is disposed adjacent to one of the sides of the second electrode.

Acoustic resonator structure having comprising a plurality of connection-side contacts

A ladder filter includes a plurality of series resonators and a plurality of shunt resonators connected between an input port and an output port. At least one of the series or shunt resonators include a bulk acoustic wave (BAW) resonator structure, which includes: a first electrode disposed over a substrate; an air cavity located in the substrate and below the first electrode; a piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, the piezoelectric layer having a thickness in a range of approximately 1.0 microns to approximately 1.5 microns; and a second electrode disposed over the piezoelectric layer. The BAW resonator structure has an area, and the area is less than an area of a comparable BAW resonator structure comprising identical layers and materials except for an undoped aluminum nitride piezoelectric layer.

Bulk acoustic resonator comprising aluminum scandium nitride

A wide bandwidth multiplexer (MUX) is provided that performs carrier aggregation. The MUX combines at least a first LC filter that acts as a low band filter, at least a first composite filter that acts as a middle band filter, and at least one other LC or composite filter that acts as a high band filter. The wide bandwidth MUX has low insertion loss and provides sufficient attenuation at adjacent edges of adjacent pass bands to prevent overlap between adjacent pass bands.

Wide bandwidth muliplexer based on LC and acoustic resonator circuits for performing carrier aggregation

An acoustic filter device for telecommunication devices includes a first acoustic band pass filter having a corresponding first passband and a second acoustic band pass filter having a corresponding second passband. The second acoustic band pass filter is connected in parallel with the first acoustic band pass filter to provide a combined passband including the first and second passbands.

Acoustic filter device with combined passband

A multiplexer device includes at least one filtering device having at least one first band pass filter, connected to a common port via at least one series inductance, respectively, and only one or non-overlapping passbands, and at least one second filtering device, each of which includes at least one second band pass filter with a total of at least two second band pass filters are connected to the common port and having non-overlapping passbands, respectively. Combined series inductance transformed input impedance of the at least one first filtering device is inductive, when viewed from the common port, in the passbands of the at least two second band pass filters. Combined input impedance of the at least one second filtering device is substantially capacitive, when viewed from the common port, in a passband of the at least one first band pass filter in the at least one first filtering device.

Multiplexer device with first and second filtering devices connected to common port

A duplexer includes a transmit filter and an integrated receive filter configured to filter a receive signal from an antenna. The integrated receive filter includes a receive filter portion having multiple acoustic resonator filter elements and a matched balun configured to convert a single-ended input signal, received at a single-ended input of the matched balun from a single-ended output of the receive filter portion, to a differential output signal. The matched balun being is located in place of a phase matching inductor of the receive filter portion, eliminating need for the phase matching inductor of the receive filter portion and a phase matching inductor of the matched balun. Impedance at the single-ended input of the matched balun includes a complex conjugate of impedance at the single-ended output of the receive filter portion.

Integrated receive filter including matched balun

A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with one of erbium or yttrium at an atomic percentage of greater than three for improving piezoelectric properties of the piezoelectric layer.

Bulk acoustic wave resonator having doped piezoelectric layer with improved piezoelectric characteristics

A method of forming a double bulk acoustic resonator structure comprises forming a first electrode on a substrate, forming a first piezoelectric layer on the first electrode, forming a second electrode on the first piezoelectric layer, forming a second piezoelectric layer on the second electrode, and forming a third electrode on the second piezoelectric layer. The first and second piezoelectric layers are formed by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum.

Double bulk acoustic resonator comprising aluminum scandium nitride

A balun includes an unbalanced port having a single-ended terminal, a balanced port having first and second differential terminals, and first and second series resonant LC circuits. The first series resonant LC circuit is connected between the first and second differential terminals, and includes a first element of a first type and one element of a second type connected in series. The second series resonant LC circuit is connected between the single-ended terminal and ground, and includes second and third elements of the first type and the one element of the second type connected in series. The one element of the second type is shared by the first and second series resonant LC circuits. The first differential terminal is connected between the one element of the second type and the third element of the first type.

Four LC element balun

A bulk acoustic wave (BAW) resonator structure comprises: a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode, the piezoelectric layer comprising boron nitride (BN); and a second electrode disposed over the first piezoelectric layer.

Bulk acoustic wave resonator comprising a boron nitride piezoelectric layer

An apparatus includes: a first apparatus port receiving a first signal having a first frequency; a second apparatus port outputting the first signal having the first frequency; a first passive device connected between the first and second apparatus ports; a second passive device connected between the first and second apparatus ports; a plurality of phase shifters each providing a corresponding phase shift, wherein at least one of the phase shifters provides its phase shift in a first signal path between the first and second apparatus ports through the first passive device, and wherein at least another phase shifter provides its phase shift in a second signal path between the first and second apparatus ports through the second passive device. The phase shifts are selected to cancel an upper or lower intermodulation product between the first signal and a second signal having a second frequency received at the second apparatus port.

Apparatus having double phase-matched configuration for reducing magnitude of intermodulation products

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Mountain View, CA, United States of America

Paul D Bradley