Forschungsverbund Berlin E.v.

Ferdinand-braun-institut Ggmbh, Leibniz-institut Fur Höchstfrequenztechnik

Paul Crump

Hans Wenzel

Goetz Erbert

Götz Erbert

Joerg Fricke

Jonathan Decker

Pietro Della Casa

Andre Maassdorf

Markus Weyers

Andrea Knigge

Jörg Fricke

Olaf Brox

Martin Zorn

Mohamed Elattar

Steffen Knigge

Christian Dominik Martin

Frank Bugge

Christoph M Schultz

Thorben Kaul

Erbert Götz

Matthias M Karow

Mohammad Jarez Miah

Andre Maaßdorf

Agnieszka Pietrzak

The present invention relates to a diode laser with a current block and, in particular, to a diode laser with a modified 'p-n-p' or “n-p-n” structure as a current block for reducing the tunneling probability. A diode laser according to the invention comprises an active layer and a layered current block formed outside the active layer, wherein the current block is made of a material doped in opposition to its surroundings for a spatially selective current injection of the active layer between an n-substrate and a p-contact; wherein the current block is separated from adjacent layers via an intrinsic outer layer.

Diode laser with current block

The present invention relates to a device for generating laser radiation. An object of the present invention is to indicate a laser diode which simultaneously has a high degree of efficiency and a low degree of far field divergence. The diode laser according to the invention comprises a current barrier (), characterized in that the current barrier () extends along a third axis (X), wherein the current barrier () has at least one opening, and a first width (W) of the opening of the current barrier () along the third axis (X) is smaller than a second width (W) of the metal p-contact () along the third axis (X).

Device for generating laser radiation

A diode laser comprises an n-type first cladding layer, an n-type first waveguide layer arranged on the first cladding layer, an active layer suitable for radiation generation and arranged on the first waveguide layer, a p-type second waveguide layer arranged on the active layer, a p-type second cladding layer which is arranged on the second waveguide layer, an n-type first intermediate layer being formed as a transition region between the first waveguide layer and the active layer, and a p-type second intermediate layer being formed as a transition region between the second waveguide layer and the active layer. The diode laser according to the invention is characterized in that the asymmetry ratio of the thickness of the first intermediate layer to the sum of the thickness of the first intermediate layer and the thickness of the second intermediate layer is less than or greater than 0.5.

Diode laser with improved mode profile

The invention relates to a laser diode () which has at least one active layer () which is arranged within a resonator () and is operatively connected to a outcoupling element (), and further at least one contact layer () for coupling charge carriers into the active layer (), wherein the resonator () comprises at least a first section () and a second section (), wherein the second section () comprises a plurality of separate resistor elements () having a specific electrical resistivity greater than the specific electrical resistivity of the regions () between adjacent resistor elements (), wherein a width (W) of the resistor elements () along a longitudinal axis (X) of the active layer () is less than 20 &#x3bc;m, and a projection of the resistor elements () on the active layer () along the first axis (Z) overlap with at least 10% of the active layer ().

Laser diode with improved electrical conduction properties

Laser diode comprises an active layer; a waveguiding region at least partially surrounding the active layer; a rear facet; a front facet designed for outcoupling laser radiation, wherein the active layer extends at least partially along a first axis (X) between the rear facet and the front facet; and a grating operatively connected to the waveguiding region, wherein the grating comprises a plurality of bridges and trenches designed such that an average increase of a coupling parameter P for the plurality of trenches along the grating is non-zero, wherein the coupling parameter P of a trench is defined by the equation, wherein dis a distance of the trench to the active layer, w is a width of the trench and &#x394;n is the refractive index difference between a refractive index of the trench and a refractive index of a material surrounding the trench.

Laser diode with distributed feedback and method for producing

It is the object of the present invention to specify a light source with high efficiency and high eye safety at the same time. For this purpose, the active layer (), the first cladding layer (), the first waveguide layer (), the second waveguide layer (), and the second cladding layer () should be designed such that 0.01 &#x3bc;m&#x2266;d&#x2266;1.0 &#x3bc;m and &#x394;n&#x2267;0.04, where dis the sum total of the layer thickness of the first waveguide layer (), the layer thickness of the active layer (), and the layer thickness of the second waveguide layer () and &#x394;n is a maximum of the refractive index difference between the first cladding layer () and the first waveguide layer () and the refractive index difference between the second waveguide layer () and the second cladding layer ().

Laser diode with high efficiency

A diode laser having aluminum-containing layers and a Bragg grating for stabilizing the emission wavelength achieves an improved output/efficiency. The growth process is divided into two steps for introducing the Bragg grating, wherein a continuous aluminum-free layer and an aluminum-free mask layer are continuously deposited after the first growth process such that the aluminum-containing layer is completely covered by the continuous aluminum-free layer. Structuring is performed outside the reactor without unwanted oxidation of the aluminum-containing semiconductor layer. Subsequently, the pre-structured semiconductor surface is further etched inside the reactor and the structuring is impressed into the aluminum-containing layer. In this process, so little oxygen is inserted into the semiconductor crystal of the aluminum-containing layers in the environment of the grating that output and efficiency of a diode laser are not reduced as compared to a diode laser without grating layers that was produced in an epitaxy step.

Diode laser and method for manufacturing a high-efficiency diode laser

A laser diode has a first n-conducting cladding layer, a first n-conducting waveguide layer arranged therein, an active layer is suitable for generating radiation arranged on the first waveguide layer, a second p-conducting waveguide layer, arranged on the active layer, and a second p-conducting cladding layer, arranged on the second waveguide layer the sum of the layer thickness of the first waveguide layer, the layer thickness of the active layer and the layer thickness of the second waveguide layer is greater than 1 &#x3bc;m and the layer thickness of the second waveguide layer is less than 150 nm. The maximum mode intensity of the fundamental mode is in a region outside the active layer, and the difference between the refractive index of the first waveguide layer and the refractive index of the first cladding layer is between 0.04 and 0.01.

High-efficiency diode laser

A broad area laser, with high efficiency and small far-field divergence, has an active layer, a first contact and a second contact, each having a width larger than 10 &#x3bc;m. An anti-wave guiding layer, which is positioned laterally with respect to the active region, is enclosed between the first and second contacts, wherein a refractive index of the anti-wave guiding layer is larger than a minimum refractive index of cladding layers. A minimum distance between the anti-wave guiding layer and a projection of one of the contacts on the plane of the anti-wave guiding layer is between 0 and 100 &#x3bc;m.

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Berlin, Germany

Paul Crump