Xerox Corporation

Paul Cherin

Santokh Singh Badesha

Geoffrey M Foley

Philip G Perry

Barry A Lees

Harvey J Hewitt

John J Wozniak, Jr

Kenneth J Pheilshifter

A process for the preparation of chalcogenide alloy compositions which comprises providing a chalcogenide alloy; admixing therewith crystalline or amorphous selenium; and subsequently subjecting the resulting mixture to evaporation.

Processes for suppressing the fractionation of chalcogenide alloys

A process for the preparation of chalcogenide alloys which comprises providing a chalcogenide alloy source component, crystallizing the source component, and evaporating the source component in the presence of an organic component.

Processes for preparing and controlling the fractionation of

A process for fabricating an electrophotographic imaging member is disclosed comprising providing in a vacuum chamber at least one crucible containing particles of an alloy comprising selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof, providing a substrate in the vacuum chamber, applying a partial vacuum to the vacuum chamber, and rapidly heating the crucible to a temperature between about 250.degree. C. and 450.degree. C. to deposit a thin continuous selenium alloy layer on the substrate. A plurality of selenium containing layers may be formed by providing in a vacuum chamber at least one first layer crucible containing particles of selenium or a sellenium alloy, at least one second layer crucible containing particles of an alloy comprising selenium, and a substrate, applying a partial vacuum to the vacuum chamber, heating the particles in the first layer crucible to deposit a thin continuous selenium or a selenium alloy first layer on the substrate, maintaining the particles in the second layer crucible at a first temperature below about 130.degree. C. while the thin continuous selenium or a selenium alloy first layer is being deposited on the substrate, and rapidly heating the particles in the second layer crucible to a second temperature between about 250.degree. C. and about 450.degree. C. to deposit a thin continuous selenium alloy second layer on the substrate.

Vacuum deposition of selenium alloy

An alloy treatment process is disclosed which comprises providing particles of an alloy comprising amorphous selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof, the particles having an average particle size of at least about 300 micrometers and an average weight of less than about 1000 mg, forming crystalline nuclei on at least the surface of the particles while maintaining the substantial surface integrity of the particles, heating the particles to an initial temperature between about 50.degree. C. and about 80.degree. C. for at least about 30 minutes to form a thin, substantially continuous layer of crystalline material on the surface of the particles while maintaining the core of selenium alloy in the particles in an amorphous state, and rapidly heating the particles to at least a second temperature below the softening temperature of the particles that is at least 20.degree. C. higher than the initial temperature and between about 85.degree. C. and about 130.degree. C. to crystallize about 5 to 100 percent by weight of the amorphous core of selenium alloy in the particles while maintaining the integrity of the alloy particles and inhibiting the loss of selenium rich material. The resulting crystallized particles in shot or pellet form may be rapidly heated in a vacuum chamber to vacuum deposit the alloy onto a substrate.

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Fairport, NY, United States of America

Paul Cherin