British Telecommunications Corporation

British Telecommunications Public Limited Company

Paul C Spurdens

Ian F Lealman

Michael J Harlow

Michael J Robertson

Rodney H Moss

Simon Cole

William J Devlin

Simon Ritchie

David M Cooper

David J Newson

Mark D Learmouth

Mark A Salter

Joseph J Isaac

William James Duncan

An indium phosphate semiconductor substrate is prepared for subsequent growth of epitaxial layers to form a semiconductor device. In the preparation, the substrate is first annealed to promote any tendency for surface accumulation of impurity atoms by diffusion from the substrate and to promote impurity atom removal from the surface of the substrate. The substrate is then surface etched to remove further impurities and to provide a clean, flat surface for subsequent epitaxial layer growth. The final stage of preparation involves growing a semi-insulating buffer layer on the substrate to isolate the device epitaxial layers from the substrate.

Preparation of semiconductor substrates

Electrical barrier structure for semiconductor device doped with

Semiconductor laser amplifiers

Optical detector with integral filter and having Fabry Perot resonator

A method for the growth of a semi-conductor material on a substrate by vapour phase epitaxy, comprises establishing a gas flow in each of a plurality of ducts, and moving the substrate, in a single plane of movement, from one duct to another. Suitable apparatus for use in the method comprises a plurality of ducts; apparatus for establishing a gas flow along each duct; a substrate support member, on which there may be a groove for the location of a substrate; and apparatus for moving, e.g. rotating, the support member. In use, the substrate is exposed sequentially to at least two of the gas flows, e.g. to grow GaInAs on InP.

Growth of semi-conductors and apparatus for use therein

Growing community of inventors

Woodbridge, United Kingdom

Paul C Spurdens