Nanosys, Inc.

Samsung Electronics Co., Ltd.

Paul Bernatis

J Wallace Parce

Joel Gamoras

Robert S Dubrow

William P Freeman

Jeffery A Whiteford

Andreas Meisel

Shihai Kan

Baixin Qian

Jonathan M Ziebarth

David P Stumbo

Xiangfeng Duan

Chao Liu

Francesco Lemmi

Srikanth Ranganathan

Yaoling Pan

James M Hamilton

Cheri X Y Pereira

Alice Fischer-Colbrie

Compositions containing a nanostructure, preferably a nanocrystal, are provided. The nanostructures have ligands bound to the surface. Such ligands are preferably siloxane containing ligands having at least one &#x2014;COON group, although ligands having various &#x2550;P&#x2550;O groups are also contemplated. The nanostructures can be embedded into a polymer such as a silicone polymer.

Nanocrystal doped matrixes

Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.

Methods for producing electronic grade metal nanostructures having low levels of contaminants are provided. Monolayer arrays, populations, and devices including such electronic grade nanostructures are described. In addition, novel methods and compositions for production of Group 10 metal nanostructures and for production of ruthenium nanostructures are provided, along with methods for recovering nanostructures from suspension.

Electronic grade metal nanostructures

The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

Systems and methods for harvesting and reducing contamination in nanowires

Growing community of inventors

Sunnyvale, CA, United States of America

Paul Bernatis