The Ohio State University

USA as Represented by Secretary of the Navy

Cambridge Display Technology Limited

Wright State University

Qutel, Inc.

Paul Berger

Stephen Karl Heeks

Phillip E Thompson

Elliott R Brown

Weidong Zhang

Tyler Growden

Niu Jin

Jeremy H Burroughes

Julian Charles Carter

David J Meyer

David F Storm

Karl D Hobart

Stephen C Lee

Roger Lake

Sean L Rommel

Philip E Thompson

Ronald P Pelletier

Sung-Yong Chung

Wu Lu

Leonard J Brillson

Gregg A Hadley

Woo-Jun Yoon

A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.

Infrared light emitters based on interband tunneling in unipolar doped n-type tunneling structures

Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.

Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures

Disclosed are field effect transistor-based (FET-based) sensors for the rapid and accurate detection of analytes both in vivo and in vitro. The FET-based sensors can include a substrate, a channel disposed on the substrate, a source electrode and a drain electrode electrically connected to the channel, and a recognition element for an analyte of interest immobilized on the surface of the channel via a linking group. The distance between the recognition element and the channel can be configured such that association of the analyte of interest with the recognition element induces a change in the electrical properties of the channel. In this way, an analyte of interest can be detected by measuring a change in an electrical property of the channel. Also provided are devices, including probes and multi-well plates, incorporating the FET-based sensors.

Devices and methods for the rapid and accurate detection of analytes

A p-channel tunneling field effect transistor (TFET) is selected from a group consisting of (i) a multi-layer structure of group IV layers and (ii) a multi-layer structure of group III-V layers. The p-channel TFET includes a channel region comprising one of a silicon-germanium alloy with non-zero germanium content and a ternary III-V alloy. An n-channel TFET is selected from a group consisting of (i) a multi-layer structure of group IV layers and (ii) a multi-layer structure of group III-V layers. The n-channel TFET includes an n-type region, a p-type region with a p-type delta doping, and a channel region disposed between and spacing apart the n-type region and the p-type region. The p-channel TFET and the n-channel TFET may be electrically connected to define a complementary field-effect transistor element. TFETs may be fabricated from a silicon-germanium TFET layer structure grown by low temperature molecular beam epitaxy at a growth temperature at or below 500&#xb0; C.

Tunneling field effect transistors and transistor circuitry employing same

A resonant inter-band tunnel diode (RITD) can be fabricated using semiconductor processing similar to that used for Complementary Metal-Oxide-Semiconductor (CMOS) device fabrication, such as can include using silicon. A memory cell (e.g., a random access memory (RAM) cell) can be fabricated to include one or more negative differential resistance device, such as tunneling diodes, such as to provide a single-bit or multi-bit cell. In an example, a 'hybrid' memory cell can be fabricated, such as including one or more negative resistance devices, a MOS transistor structure, and a capacitor structure, such as including an integrated capacitor configuration similar to a generally-available dynamic RAM (DRAM) structure, but such as without requiring a refresh and offering a higher area efficiency.

Compact memory structure including tunneling diode

A p-channel tunneling field effect transistor (TFET) is selected from a group consisting of (i) a multi-layer structure of group IV layers and (ii) a multi-layer structure of group III-V layers. The p-channel TFET includes a channel region comprising one of a silicon-germanium alloy with non-zero germanium content and a ternary III-V alloy. An n-channel TFET is selected from a group consisting of (i) a multi-layer structure of group IV layers and (ii) a multi-layer structure of group III-V layers. The n-channel TFET includes an n-type region, a p-type region with a p-type delta doping, and a channel region disposed between and spacing apart the n-type region and the p-type region. The p-channel TFET and the n-channel TFET may be electrically connected to define a complementary field-effect transistor element. TFETs may be fabricated from a silicon-germanium TFET layer structure grown by low temperature (500 degrees Centigrade) molecular beam epitaxy.

Silicon-based tunneling field effect transistors and transistor circuitry employing same

A light-emissive device comprising: a light-emissive region (); a first electrode () located on a viewing side of the light-emissive region for injecting charge carriers of a first type: and a second-electrode () located on a non-viewing side of the light-emissive region for injecting charge carriers of a second type; and wherein there is a reflectivity-influencing structure () located on the non-viewing side of the light-emissive region and including a light absorbent layer comprising graphite and/or a fluoride or oxide of a low work function metal.

Light-emissive device having co-evaporated cathode

Some disclosed interband tunneling diodes comprise a plurality of substantially coherently strained layers including layers selected from a group consisting of silicon, germanium, and alloys of silicon and germanium, wherein at least one of said substantially coherently strained layers is tensile strained. Some disclosed resonant interband tunneling diodes comprise a plurality of substantially coherently strained layers including layers selected from a group consisting of silicon, germanium, and alloys of silicon and germanium, wherein at least one of said substantially coherently strained layers defines a barrier to non-resonant tunnel current. Some disclosed interband tunneling diodes comprise a plurality of substantially coherently strained layers, wherein at least one of said substantially coherently strained layers is tensile strained. Some disclosed resonant interband tunneling diodes comprise a plurality of substantially coherently strained layers, wherein at least one of said substantially coherently strained layers defines a barrier to non-resonant tunnel current.

Si/SiGe interband tunneling diodes with tensile strain

A device includes: a first electrical contact; a second electrical contact; a semiconducting or semimetallic organic layer disposed at least partially between the first and second electrical contacts; and a tunneling barrier layer disposed at least partially between the semiconducting or semimetallic organic layer and the first electrical contact. The tunneling barrier layer has a thickness effective to enable flow of an electrical current through the tunneling barrier layer responsive to an operative electrical bias applied across the first and second electrical contacts, the electrical current exhibiting negative differential resistance for at least some applied electrical bias values. Circuits are also disclosed that utilize one or more negative differential resistance polymer diodes to implement logic, memory, or mixed signal applications.

Negative differential resistance polymer devices and circuits incorporating same

A light-emissive device including: a light-emissive region (); a first electrode () located on a viewing side of the light-emissive region for injecting charge carriers of a first type; and a second-electrode () located on a non-viewing side of the light-emissive region for injecting charge carriers of a second type; and wherein there is a reflectivity-influencing structure () located on the non-viewing side of the light-emissive region and having a light absorbent layer including graphite and/or a fluoride or oxide of a low work function metal.

Display devices with reflectivity-influencing electrode

A Si-based diode () is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction () having a backward diode current-voltage characteristic in which the forward tunneling current is substantially smaller than the backward tunneling current at comparable voltage levels. In some embodiments, the Si-based pn junction includes at least one non-silicon or silicon alloy layer such as at least one SiGe layer (). In some embodiments, at least one delta doping () is disposed on the silicon substrate in or near the pn junction, that together with the Si-based pn junction define an electrical junction having the backward diode current-voltage characteristic. A large area detector array may include a plurality of such Si-based diodes ().

Silicon-based backward diodes for zero-biased square law detection and detector arrays of same

Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers surrounding a tunnel barrier; (ii) with a quantum well adjacent to, but not necessarily in contact with, one of the injectors, and (iii) with a first quantum well adjacent to, but not necessarily in contact with, the bottom injector and a second quantum well adjacent to, but not necessarily in contact with, the top injector. Process parameters include temperature process for growth, deposition or conversion of the tunnel diode and subsequent thermal cycling which to improve device benchmarks such as peak current density and the peak-to-valley current ratio.

Method of making interband tunneling diodes

A silicon-based interband tunneling diode () includes a degenerate p-type doping () of acceptors, a degenerate n-type doping () of donors disposed on a first side of the degenerate p-type doping (), and a barrier silicon-germanium layer () disposed on a second side of the degenerate p-type doping () opposite the first side. The barrier silicon-germanium layer () suppresses diffusion of acceptors away from a p/n junction defined by the degenerate p-type and n-type dopings ().

Si/SiGe interband tunneling diode structures including SiGe diffusion barriers

The present invention provides a method for forming quantum tunneling devices comprising the steps of: (1) providing a quantum well, the quantum well comprising a composite material, the composite material comprising at least a first and a second material; and (2) processing the quantum well so as to form at least one segregated quantum tunneling structure encased within a shell comprised of a material arising from processing the composite material, wherein each segregated quantum structure is substantially comprised of the first material. The present invention also comprises additional methods of formation, quantum tunneling devices, said electronic devices.

Growing community of inventors

Columbus, OH, United States of America

Paul Berger