Applied Materials, Inc.

International Business Machines Corporation

Blueshift Biotechnologies, Inc.

Novasolix, Inc.

Other

Paul B Comita

David K Carlson

Norma B Riley

Lance A Scudder

Thomas H Baum

Evan Francis Cromwell

Laurence Hager Cooke

Roger N Anderson

Ann P Waldhauer

Rekha Ranganathan

Arkadii V Samoilov

Andreas G Hegedus

Robert E Cousins

Dale R Dubois

Steven C Miller

Dale Robert Du Bois

Kaushal Kishore Singh

Andrei Brunfeld

Robert L Jackson

Albert Karl Henning

Johann F Adam

Jyotsna Iyer

George William Tyndall, Iii

Christopher B Shumate

Doria W Fan

Anna Lena Thilderkvist

Richard T Preston

John Burke

Yao Te Cheng

David B Cooke

Christopher J Seipert

Kurt A Rubin

Thomas Anthony Wassick

Lori D Washington

Carl Eric Larson

Margaret E Best

Jean Rene Vatus

Thomas E Deacon

Franklin M Schellenberg

Wade Wai-Chung Tang

Bradley Mitchell Curelop

Robert T Trujillo

Harold J Mellen, Iii

Hali J L Forstner

Hali J Forstner

Kimberly E Klinck

Yu-Sze Yen

Mark Stephen Crowder

David R Carlson

AnnaLena Thilderkvist

Annie A Karpati

Thoams F Redmond

Karin Anna Lena Thilderkvist

John R Lankard Sr

Takao Suzuki

Frank M Schellenberg

Grant D Imper

Darin S Olson

Methods for constructing multi-walled carbon nanotube (MWCNT) antenna arrays, may include: variable doping of the MWCNTs, forming light pipes with layers of variable dielectric glass, forming geometric diodes on full-wave rectified devices that propagate both electrons and holes, using clear conductive ground plans to form windows that can control a building's internal temperature, and generating multiple lithographic patterns with a single mask.

Solar antenna array fabrication

A solar antenna array may comprise an array of carbon nanotube antennas that may capture and convert sunlight into electrical power. A method for constructing the solar antenna array from a glass top down to aluminum over a plastic bottom such that light passing through the glass top and/or reflected off the aluminum both may be captured by the antennas sandwiched between. Techniques for patterning the glass to further direct the light toward the antennas and techniques for continuous flow fabrication and testing are also described.

Methods and apparatus, including computer program products, implementing and using techniques for collecting optical data pertaining to one or more characteristics of a sample. The apparatus has a light source, one or more illumination optical elements, a scanner, one or more collection optical elements, and a device forming an aperture that limits detection of light from the sample. The illumination optical elements direct a light beam from the light source onto the sample. The scanner scans the light beam across the sample. The collection optical elements collect light from the sample and transmit the collected light to a detector. None of the collection optical elements are included among the illumination optical elements. The device forming an aperture limits detection of light from the sample to light associated with a limited vertical depth within the sample, and is one of the collection optical elements.

Time dependent fluorescence measurements

Methods for depositing a silicon-containing film are described. The methods may include delivering a silicon compound to a surface or a substrate, and reacting the silicon compound to grow the silicon-containing film. The silicon compound may be one or more compounds having a formula selected from the group SiX, SiX, SiX, and SiX, where X is independently a hydrogen or halogen.

Silicon-containing layer deposition with silicon compounds

Methods and apparatus are described for detecting specific binding between first and second chemical entities. The first chemical entity in association with a first fluorophore is immobilized. The second chemical entity is allowed to bind with the immobilized first chemical entity. The second chemical entity is or becomes coupled to a second fluorophore, which forms a FRET pair with the first fluorophore. The bound chemical entities are exposed to radiation at an excitation frequency for either the first or the second fluorophore, and polarization anisotropy of a FRET fluorescent signal from the bound chemical entities is measured to detect specific binding between the first and second chemical entities. Techniques are also disclosed for detecting whether a FRET interaction is occurring between a first chemical entity including a donor fluorophore and a second chemical entity including an acceptor fluorophore, using simultaneous anisotropy measurements at the wavelengths of the donor and acceptor fluorophores.

Screening using polarization anisotropy in FRET emissions

Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.

Methods and apparatus for performing scatterometry measurements of biological samples as described herein. A substrate having formed therein one or more sample wells is provided. Each sample well is configured to hold a sample solution containing objects that are to be characterized based on their light scattering properties. One or more sample solutions are dispensed into the sample wells. A specular reflection reducing element is applied to at least some of the sample solutions in the sample wells to decrease reflections of light into one or more detectors. A light beam is directed from a light source onto the objects in the sample wells. Light scattered by the objects in the sample wells is collected and transmitted to one or more detectors. The signal from the detectors is analyzed to detect the one or more characteristics of the one or more samples.

Methods and apparatus for reducing noise in scatterometry measurements

Methods and apparatus, including computer program products, implementing and using techniques for collecting optical data pertaining to one or more characteristics of a sample. A light beam of a first frequency is scanned onto a sample surface using one or more illumination optical elements. Light of a second frequency is collected from a scan line on the sample surface using one or more collection optical elements. None of the one or more collection optical elements are included among the one or more illumination optical elements. The collected light is transmitted to a detector.

Measuring time dependent fluorescence

Embodiments of the invention generally provide a composition of silicon compounds and methods for using the silicon compounds to deposit a silicon-containing film. The processes employ introducing the silicon compound to a substrate surface and depositing a portion of the silicon compound, the silicon motif, as the silicon-containing film. The ligands are another portion of the silicon compound and are liberated as an in-situ etchant. The in-situ etchants supports the growth of selective silicon epitaxy. Silicon compounds include SiRX, SiRX, SiRX, wherein X is independently hydrogen or halogen and R is carbon, silicon or germanium. Silicon compound also include compounds comprising three silicon atoms, fourth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen, as well as, comprising four silicon atoms, fifth atom of carbon, silicon or germanium and atoms of hydrogen or halogen with at least one halogen.

Methods, apparatus, and system, implementing and using techniques for detecting a presence of one or more target analytes in particular regions of interest of one or more samples. One or more samples including objects and one or more target analytes are provided. Some of the target analytes are labeled with a fluorophore and are bound to some of the objects in the samples. The samples are illuminated with fluorescence inducing light and fluorescent light is collected from one or more regions of the one or more samples. At least one anisotropy measurement of the samples is performed to identify regions of interest where one or more target analytes are bound to the objects. The collected fluorescent light from the regions of interest is analyzed to determine a presence of target analytes that are bound to the objects in the one or more samples.

Exploring fluorophore microenvironments

A method is provided wherein a temperature reading error of a pyrometer is avoided. An upper pyrometer is used to detect infrared radiation from a test layer formed on a test substrate under standard processing conditions. The infrared radiation from the test layer has a period having a length which is indicative of growth rate of the layer. The period is generally inversely proportional to the growth rate. The growth rate is directly related to the temperature.

Method of calibrating and using a semiconductor processing system

Methods and apparatuses for forming an oxide film. The method includes depositing an oxide film on a substrate using a process gas mixture that comprises a silicon source gas, an oxygen gas, and a hydrogen gas, and a process temperature between 800&deg; C. and 1300&deg; C. During the deposition of the oxide film, the process gas mixture comprises less than 6% oxygen, silicon gas, and predominantly hydrogen.

Apparatuses and methods for depositing an oxide film

A method of treating a silicon surface of a substrate that includes heating the substrate in a process chamber to a temperature, exposing a first area adjacent to the silicon surface to a first gas mixture comprising an etchant, a silicon source gas, and a carrier, exposing a second area adjacent to the silicon surface to a second gas mixture, wherein the second gas mixture is different from the first gas mixture.

Apparatus and method for surface finishing a silicon film

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Menlo Park, CA, United States of America

Paul B Comita