International Business Machines Corporation

King Abdulaziz City for Science and Technology

Globalfoundries Inc.

Other

Ultratech, Inc.

Paul Alfred Lauro

Keith E Fogel

Da-Yuan Shih

Brian Samuel Beaman

Devendra K Sadana

Stephen W Bedell

Jae-Woong Nah

Peter Alfred Gruber

Maurice Heathcote Norcott

Gareth Geoffrey Hougham

George Frederick Walker

Stephen L Buchwalter

Sung Kwon Kang

Ning Li

Daniel Peter Morris

Yun-Hsin Liao

Xiao Hu Liu

Jeffrey Donald Gelorme

Bruce Kenneth Furman

Brian Richard Sundlof

Ibrahim A Alhomoudi

Joseph Zinter, Jr

Davood Shahrjerdi

Katherine Lynn Saenger

Christopher Vincent Jahnes

James Patrick Doyle

S Jay Chey

Nancy C LaBianca

Michael Joseph Rooks

John J Ritsko

Madhusudan K Iyengar

Roger R Schmidt

Theodore Gerard Van Kessel

Yves Corfield Martin

Henry Atkinson Nye, Iii

Sherif Ahmed Goma

Ajay Prabhakar Giri

Joanna Rosner

Jungihl Kim

Donna S Zupanski-Nielsen

Balaram Ghosal

Stephen James Kilpatrick

Wei Zou

Luc L Belanger

Turki Bin Saud Bin Mohammed Al-Saud

Bahman Hekmatshoartabari

Michael J Ellsworth, Jr

Robert E Simons

Richard C Chu

Levi A Campbell

Voya Rista Markovich

Christian Lavoie

Michael A Gaynes

Bing Dang

Paul Stephen Andry

Eugene John O'Sullivan

Bucknell Chapman Webb

Fuad Elias Doany

Jerome J Cuomo

Sushumna Iruvanti

Leathen Shi

David Noel Light

Douglas Oliver Powell

Kamalesh K Srivastava

Donald W Henderson

Kazushige Toriyama

Anthony P Ingraham

Leena Paivikki Buchwalter

Jonathan H Griffith

Thomas P Gall

Robert J Polastre

Jaynal Abedin Molla

Perminder S Bindra

Michael J Sullivan

Adinath S Narasgond

George J Saxenmeyer, Jr

James L Hedrick, Jr

Eric H Laine

Jack A Varcoe

Valérie Anne Oberson

Ekkehard F Miersch

Da Yuan Shih

Kie Y Ahn

Ghavam G Shahidi

James L Hedrick

Marc Adam Bergendahl

Minhua Lu

Ho-Ming Tong

Claudius Feger

Norma Edith Sosa Cortes

Valerie A Oberson

George Liang-Tai Chiu

Roger A Russo

Brain S Beaman

Da-Yaun Shih

Da-Juan Shih

Apparatus and methods are disclosed for transferring solder to a substrate. A substrate belt moves one or more substrates in a belt direction. A decal has one or more through holes in a hole pattern that hold solder. Each of the solder holes can align with respective locations on one of the substrates. An ultrasonic head produces an ultrasonic vibration in the solder in a longitudinal direction perpendicular to the belt direction. The ultrasonic head and substrate can be moved together in the longitudinal direction to maintain the ultrasonic head in contact with the solder while the ultrasonic head applies the ultrasonic vibration. Various methods are disclosed including methods of transferring the solder with or without external heating.

Ultrasonic-assisted solder transfer

Protruding solder structures are created for electrical attachment of semiconductor devices. A rigid mold having one or more mold openings is attached to and used in combination with a decal structure that has one or more decal holes. The decal structure is disposed on the rigid mold so that the decal openings are aligned over the mold openings. Each of the decal hole and mold opening in contact form a single combined volume. The single combined volumes are filled with solder to form protruding solder structures. Various structures and methods of making and using the structures are disclosed.

Combination polyimide decal with a rigid mold

A method for forming a battery structure includes texturing an anode packaging material to form a first textured surface, depositing one or more metal layers including an anode metal on the first textured surface and forming a separator on the anode metal. It also includes texturing a cathode packaging material to form a second textured surface, depositing a cathode metal on the second textured surface, and forming an electrolyte binder paste on the cathode metal, which contacts the separator with any gap being filled with electrolyte.

Low-profile battery construct with engineered interfaces

In an Injection Molded Soldering system, a single, one-layer decal has one or more through hole patterns where each through hole pattern has a plurality of through holes through the decal. A drum with a drum circumference turns while the decal is forced to be adjacent to the drum circumference. The decal passes by a tangent point on the drum circumference where one or more solder-filled through hole patterns align with recessed openings on a substrate at the tangent point of the drum circumference. Applied heat causes the solder structures to melt and flow into the recessed openings.

Continuous solder transfer to substrates

A method of making a GaN device includes: forming a GaN substrate; forming a plurality of spaced-apart first metal contacts directly on the GaN substrate; forming a layer of insulating GaN on the exposed portions of the upper surface; forming a stressor layer on the contacts and the layer of insulating GaN; forming a handle substrate on the first surface of the stressor layer; spalling the GaN substrate that is located beneath the stressor layer to separate a layer of GaN and removing the handle substrate; bonding the stressor layer to a thermally conductive substrate; forming a plurality of vertical channels through the GaN to define a plurality of device structures; removing the exposed portions of the layer of insulating GaN to electrically isolate the device structures; forming an ohmic contact layer on the second surface; and forming second metal contacts on the ohmic contact layer.

Method of making a gallium nitride device

A battery structure includes an anode packaging material having a first textured surface and an anode metal formed on the first textured surface. A separator is formed on the anode metal. A cathode packaging material includes a second textured surface. A cathode metal is formed on the second textured surface. An active cathode paste is formed on the cathode metal and brought into contact with the separator such that any gap is filled with electrolyte.

A method of producing a semiconductor device includes forming a stack including a semiconductor material having a Group III nitride semiconductor material formed on a growth substrate, a protective layer formed over the Group III nitride semiconductor material, and a handle layer and a stressor layer formed over the protective layer. The stack is spalled to separate the growth substrate from the stack.

Protective capping layer for spalled gallium nitride

Solder bumps are provided on round wafers through the use of injection molded solder. Copper pillars or ball limiting metallurgy are formed over I/O pads within the channels of a patterned mask layer. Solder is injected over the pillars or BLM, filling the channels. Molten solder can be injected in cavities formed in round wafers without leakage using a carrier assembly that accommodates wafers that have been previously subjected to mask layer deposition and patterning. One such carrier assembly includes an elastomeric body portion having a round recess, the walls of the recess forming a tight seal with the round wafer. Other carrier assemblies employ adhesives applied around the peripheral edges of the wafers to ensure sealing between the carrier assemblies and wafers.

Direct injection molded solder process for forming solder bumps on wafers

Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling.

Method for improving quality of spalled material layers

Techniques for integrating spalling into layer transfer processes involving optical device semiconductor materials are provided. In one aspect, a layer transfer method for an optical device semiconductor material includes forming the optical device semiconductor material on a first substrate; depositing a metal stressor layer on top of the optical device semiconductor material; attaching a first handle layer to the metal stressor layer; removing the optical device semiconductor material from the first substrate by pulling the first handle layer away from the first substrate; attaching a second handle layer to the optical device semiconductor material; removing the first handle layer from the stack; and forming a second substrate on the stressor layer. Vertical LED devices and techniques for formation thereof are also provided.

Simplified process for vertical LED manufacturing

Described herein is a method for manufacturing a stack of semiconductor materials in which a growth substrate is separated from the stack after a semiconductor material, e.g., a Group III nitride semiconductor material, is grown on the substrate. The separation is effected in a spalling procedure in which spalling-facilitating layers are deposited over a protective cap layer that is formed over the Group III-nitride semiconductor material. Such spalling-facilitating layers may include a handle layer, a stressor layer, and an optional adhesion layer. The protective cap layer protects the Group III-nitride from being damaged by the depositing of one or more of the spalling-facilitating layers. After spalling to remove the growth substrate, additional processing steps are taken to provide a semiconductor device that includes undamaged semiconductor material. In one arrangement, the semiconductor material is GaN and includes p-doped GaN region that was undamaged during manufacturing.

A handle substrate having at least one metallization region is provided on a stressor layer that is located above a base substrate such that the at least one metallization region is in contact with a surface of the stressor layer. An upper portion of the base substrate is spalled, i.e., removed, to provide a structure comprising, from bottom to top, a spalled material portion of the base substrate, the stressor layer and the handle substrate containing the at least one metallization region in contact with the surface of the stressor layer.

Patterned metallization handle layer for controlled spalling

According to an embodiment of the present invention, a method for fabricating a semiconductor device comprises depositing a transition layer on a substrate, depositing GaN material on the transition layer, forming a contact on the GaN material, depositing a stressor layer on the GaN material, separating the transition layer and the substrate from the GaN material, patterning and removing portions of the GaN material to expose portions of the stressor layer.

Fabricating high-power devices

Growing community of inventors

Brewster, NY, United States of America

Paul Alfred Lauro