Pacific Solar Pty Limited

Paul Alan Basore

Zhengrong Shi

Stuart Ross Wenham

Martin Andrew Green

Jingjia Ji

Trevor Lindsay Young

Rhett Evans

Neil John Barrett

Jing Jia Ji

Shijun Cai

Guangchun Zhang

An interconnect structure is provided by applying a conductive layer (typically one or more metal layers) over the entire surface of the module () to form all of the contacts () to all of the cells in the module and then scribing the conductive layer into a series of strips using a series of straight high speed laser scribes. The strips are then divided into individual links by scribing transversely to the first scribe direction with the laser turned on and off to cut each alternate stripe. The p-type regions of the cells are contacted through holes (), n-type regions are contacted through holes (). A silicon film () is separated into cells () by isolation grooves (). In a first embodiment, every second transverse scribe is offset by one strip such that each strip is cut into links which overlap two links on either side that are offset by a distance equal to half the pitch of the links. The pitch of the links is equal to two cell widths and the transverse scribes are coincident with or close to interruptions in the underlying cell layout representing cell boundaries between adjacent cells of the module. In a second embodiment, conductive bridges extend across longitudinal interruptions separating the parallel extending strips. In this embodiment, the like type contact pads for the cells are aligned in rows extending transverse to the cell boundary with alternating rows of p type and n type contact pads.

Chain link metal interconnect structure

A method of texturing a substrate or superstrate support material is provided, in which a thin textured film () is applied to the surface of the support material such as glass sheet (). The dipping process is performed by loading a sheet () of the support material () into a frame () which provides a small number of small area contact points () at which the sheet () is supported and lowering the frame () into texturing solution () comprising a mixture () of Sol-Gel () and texturing particles () comprising SiOmonospheres. The sheet is then withdrawn from the texturing solution and the resultant film allowed to dry. The film is then sintered and the resulting film provides a textured surface suitable for the formation of a photovoltaic device.

Glass beads coating process

A method of crystallizing amorphous silicon on a glass substrate relies on deliberately heating the glass substrate above its strain point during processing, making low temperature glasses, such as soda lime glasses, ideal for such use. Since the glass is plastic above this temperature while the silicon remains elastic, the glass is forced to conform to the shape defined by the silicon once this temperature is exceeded. This process relaxes any stresses which might otherwise be created in the glass or film, as long as the glass temperature is above the strain point. As the glass temperature is reduced back below the strain point, the glass becomes progressively more rigid and stresses will begin to build up in the film and glass. When cooled slowly, the stress in the film and the glass can be controlled by appropriate selection of a thermal expansion coefficient of the glass relative to that of silicon, particularly those with linear expansion coefficients in the range 4-10 ppm/&deg; C. below the strain point.

Forming a crystalline semiconductor film on a glass substrate

A thin film photovoltaic devices is described, having a glass substrate over which is formed a thin film silicon device having an n layer a p layer and a dielectric layer (typically silicon oxide or silicon nitride). To create a connection through the p layer to the underlying n layer a column of semi-conductor material is heated, the column passing through the various doped layers and the material in the column being heated or melted to allow migration of dopant between layer of the device in the region of the column.

Melt through contact formation method

A simple thin film structure is illustrated in which a substrate ( ), which may be glass or any other suitable substrate material, supports a device structure ( ), over which is formed an inert dielectric layer ( ) and a metal film ( ). A pulsed laser beam ( ) directed at the surface of the metal film layer ( ). When the laser is pulsed on, a small amount of metal is ablated directly under the beam and surface tension in the surface of molten metal surrounding the ablated region pulls the metal back from the hole causing a slight thickening of the metal ( ) around the hole, and creates a hole ( ) which is significantly larger in diameter than the ablated region.

Metal film interrupting process

A thin film silicon solar cell is provided on a glass substrate, the glass having a textured surface, including larger scale surface features and smaller scale surface features. Over the surface is deposited a thin barrier layer which also serves as an anti-reflection coating. The barrier layer may be a silicon nitride layer for example and will be 70 nm&plusmn;20% in order to best achieve its anti-reflection function. Over the barrier layer is formed an essentially conformal silicon film having a thickness which is less than the dimensions of the larger scale features of the glass surface and of a similar dimension to the smaller scale features of the glass surface.

Thin films with light trapping

A simple thin film provided on a substrate which supports a semiconductor device structure, over which is formed a dielectric barrier and a composite metal film contact structure. Contacts are formed by creating holes in the dielectric barrier at locations where contact to an upper region of the semiconductor material is required, and then forming a first metal film extending into the holes to contact a top region of the semiconductor structure. A second set of holes are created to expose an underlying opposite polarity region. Surfaces at the second holes are doped and a second metal film is formed to contact the underlying semiconductor region. The metal structure is then scribed to isolate the contacts to the upper and lower semiconductor regions.

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Caringbah, Australia

Paul Alan Basore