Mcnc

Northern Telecom Limited

Unitive International Limited

Paul A Magill

Glenn A Rinne

Nicholas G Koopman

Michele J Berry

A controlled-shaped solder reservoir provides additional solder to a bump in the step for increasing the volume of solder forming the solder bump. The controlled shaped reservoirs can be shaped and sized to provide predetermined amounts of solder to the solder bump. Thus, the height of the resulting solder bump can be predetermined. The solder reservoirs can be shaped to take a minimum amount of space, such as by at least partially wrapping around the solder bump. Consequently, the solder bumps may have increased height without adding to the space requirements of the solder bump, or without increasing the fabrication cost. In addition, due to the finite time required for solder flow, a means of sequencing events during soldering is provided.

Controlled-shaped solder reservoirs for increasing the volume of solder bumps

A controlled-shaped solder reservoir provides additional solder to a bump in the flow step for increasing the volume of solder forming the solder bump. The controlled shaped reservoirs can be shaped and sized to provide predetermined amounts of solder to the solder bump. Thus, the height of the resulting solder bump can be predetermined. The solder reservoirs can be shaped to take a minimum amount of space, such as by at least partially wrapping around the solder bump. Consequently, the solder bumps may have increased height without adding to the space requirements of the solder bump, or without increasing the fabrication cost. In addition, due to the finite time required for solder flow, a means of sequencing events during soldering is provided.

Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby

A defective area on a microelectronic substrate is repaired using an image reversal photoresist and image reversal process. The defective area on a microelectronic substrate is identified and a layer of image reversal photoresist is applied to the microelectronic substrate. The image reversal photoresist is then exposed twice in an image reversal process, and the image reversal photoresist is then removed over the defective area. A repair material is then blanket deposited, and the image reversal photoresist is removed in a lift-off operation such that the material on the defective area remains. Missing lines and broken lines may be repaired. Conductive and dielectric materials may be repaired.

Image reversal method for repairing defective areas on microelectronic

An electrical connector includes a housing and a row of connector contacts coupled to the housing. The row of connector contacts has a predetermined center-to-center spacing between adjacent contacts, with the predetermined center-to-center spacing being relatively large relatively far from an imaginary reference point in the row of connector contacts, and being relatively small relatively near the imaginary reference point in the row of connector contacts. The imaginary reference point is preferably at the center of the row of contacts, and the center-to-center contact spacing preferably progressively increases from the center of the row to the ends of the row. The size of the connector contacts may also progressively increase as well. The electrical connector is preferably adapted for use with a multilayer ceramic substrate which includes a row of capture pads of the same predetermined center-to-center spacing at the edge thereof. The variable center-to-center spacing ensures electrical connection to a conductor filled via in the multilayer ceramic substrate notwithstanding variability and location of the respective via due to shrinkage of the substrate during fabrication thereof.

Electrical connector including variably spaced connector contacts

Capture pads of variable size are provided on the face of a multilayer ceramic substrate, to accommodate the actual shrinkage tolerance of the substrate at each capture pad position. For example, assuming a minimum shrinkage reference point is at the center of the substrate face, the capture pad size is relatively large adjacent the edges of the substrate face and relatively small adjacent the center of the substrate face. By sizing each capture pad based on the maximum positional variation at the particular capture pad position, higher contact density is obtainable than with known uniform size capture pads. The variable size capture pads may also be used at one or more rows of capture pads located along one or more edges of the substrate, for electrical connection to an edge connector. For example, assuming a minimum shrinkage reference point at the center of the row, the capture pads are relatively large adjacent the ends of the row of capture pads and are relatively small adjacent the center of the row. Edge connectors with variable spacing of edge connector contacts are also provided. Capacitive ground plane coupling to the variable size capture pads is made uniform by providing a uniform size ground plane region adjacent each capture pad, with the uniform size being smaller than the smallest capture pad. A high density microelectronic substrate is thereby obtained without degrading the performance of the substrate.

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Chapel Hill, NC, United States of America

Paul A Magill