U.S. Philips Corporation

Paul A Hart

Jan W Slotboom

Johannes A Appels

Marnix G Collet

Johannes F Verhoeven

Albert Schmitz

Hendrik C De Graaff

Semiconductor devices, one having a planar bipolar high-voltage semiconductor circuit element comprising an island-shaped region of one conductivity type. On its lower side the island-shaped region is bounded by a first pn junction having a comparatively high breakdown voltage, and laterally by a second pn junction having a comparatively low breakdown voltage. The doping and the thickness of the island-shaped region are so small that the region is entirely depleted before breakdown occurs. The second semiconductor device having a field effect transistor of the lateral or vertical type with an island-shaped region having a contact region and bounded at the bottom by a pn junction having a comparatively high breakdown voltage and laterally by a second pn junction having a comparatively low breakdown voltage. The doping and thickness of the island-shaped region are so small that the region situated between the second pn junction and the contact region is fully depleted before breakdown at the second pn junction occurs.

Semiconductor device

A method of manufacturing a semiconductor device having a transistor structure in which the emitter zone comprises a lower-doped region adjoining the base zone and a more highly-doped region adjoining the surface. According to the invention, the more highly-doped part is obtained by the introduction of doping atoms through an undoped polycrystalline layer provided on the surface. Preferably, a thin silicon nitride or silicon oxide layer is provided between the surface and the polycrystalline silicon layer prior to providing the latter.

Method of manufacturing a semiconductor device

Growing community of inventors

Eindhoven, Netherlands

Paul A Hart