Texas Instruments Corporation

Genesis Led Solutions

Paul A Chintapalli

Paul Joseph Hundt

Sarma S Gunturi

Solomon Raju S Chinnam

Sainath A Thoppil

The light fixture includes a ceiling mounted, hollow support body generally comprised of pre-existing fluorescent lighting troffer, a base plate hingedbly mounted to the support body preferably via a hook/slot assembly and comprised of a heat dissipating aluminum material, a power supply unit mounted along a top of the base plate, a plurality of lighting units, each being electrically connected to the power supply unit, and each being mounted to the base plate, the plurality of lighting units each including at least one light emitting element. The lighting units are comprised of a plurality of individual strips dispersed along the bottom of the base plate for optimal heat dispersion. The base plate may have flat or angled mounting surfaces for the lighting units depending on a direction of emitted light and heat dissipation. A diffuser panel may be spaced below the lighting units and hingedbly mounted to the support body.

LED luminaire

A method for fabricating a flash memory device having a self-aligned source includes providing a semiconductor substrate having a source region separated from a drain region by a channel region. The method also includes forming an isolation structure in the semiconductor substrate that crosses the source, drain, and channel regions of the semiconductor substrate. The method also includes forming a continuous stack structure outwardly from the channel region of the semiconductor substrate and the isolation structure. The method includes depositing a bottom anti-reflective layer over the semiconductor substrate, the isolation structure and the stack structure to substantially uniformly planarize the semiconductor substrate and the isolation structure. The method further includes depositing a photoresist layer over select portions of the bottom anti-reflective layer and the continuous stack structure to form a self-aligned source pattern using a photo mask. The method includes etching the isolation structure and the bottom anti-reflective layer corresponding to the self aligned source pattern using a low selectivity etch process to remove a portion of the isolation structure and etching a remaining portion of the isolation structure using high selectivity etch process.

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Plano, TX, United States of America

Paul A Chintapalli