United Microelectronics Corp.

Pau-Chung Lin

Chin-Cheng Chien

Jiunn-Hsiung Liao

Chieh-Te Chen

Chiu-Hsien Yeh

Shin-Chi Chen

Ling-Chun Chou

I-Chang Wang

Shin-Chuan Huang

Guang-Yaw Hwang

A strained silicon substrate structure includes a first transistor and a second transistor disposed on a substrate. The first transistor includes a first gate structure and two first source/drain regions disposed at two sides of the first gate structure. A first source/drain to gate distance is between each first source/drain region and the first gate structure. The second transistor includes a second gate structure and two source/drain doped regions disposed at two side of the second gate structure. A second source/drain to gate distance is between each second source/drain region and the second gate structure. The first source/drain to gate distance is smaller than the second source/drain to gate distance.

Strained silicon structure

Growing community of inventors

Taoyuan County, Taiwan

Pau-Chung Lin