Ecole Polytechnique Federale De Lausanne

Asulab S.a.

Fei Comapny

Kba-giori S.a.

Bobst Mex Sa

Ecole Polytechnique Féderale De Lausanne (epfl)

Patrik Hoffmann

Joachim Grupp

Gian-Carlo Poli

Tristan Bret

Pierre-Yves Baroni

Sébastien Vaucher

Michel Rossi

Xavier Multone

Estelle Wagner

Simone Amorosi

Vincent Moreau

Kilian Wasmer

Giacomo Benvenuti

Estelle Halary-Wagner

Sébastien Equis

Gilles Pillonel

A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium materials on lithography masks. In one embodiment, a polar compound, such as ClNOgas, is activated by the electron beam to selectively etch a chromium material on a quartz substrate. By using an electron beam in place of an ion beam, many problems associated with ion beam mask repair, such as staining and riverbedding, are eliminated. Endpoint detection is not critical because the electron beam and gas will not etch significantly the substrate.

Beam-induced etching

The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.

Large area deposition in high vacuum with high thickness uniformity

A method for separating and recovering silicon debris from sawing waste is characterized in that it includes the following steps: &#x2014;treating the sawing waste so as to deoxidize the silicon debris in a manner that reduces their surface energy, &#x2014;applying to the sawing waste thus treated a flotation method using a flotation liquid and a nonoxidizing flotation gas, and &#x2014;recovering the silicon debris at the surface of the flotation liquid.

Method for recovering silicon from sawing waste

The substrate with electrodes is formed of a transparent material onto which is deposited a film () of a transparent conductive material of thickness eand of refractive index n, said film being structured to form a set of electrodes () whose contours () delimit insulating spaces (), wherein the insulating spaces () are filled with a transparent dielectric material of thickness eand of refractive index nso that the respective thicknesses of the conductive material and the dielectric material are inversely proportional to the values of the refractive indices of said materials and said dielectric material forms neither depressions nor beads at the contour () of the electrodes. A hardcoating layer () may be disposed between the substrate () and the electrodes and a protective film () added. The substrate with electrodes is obtained by UV irradiation through a single mask.

Method of substrate with transparent electrodes and devices incorporating it

A process for providing a security paper, in particular a banknote, with a coloured marking, comprising providing a photosensitive preparation on a portion of said document and submitting at least selected areas of said portion to a light beam, wherein said preparation is capable of forming a film on said portion and comprises a substance capable of producing colloidal metal particles under the effect of UV irradiation, and said areas are irradiated by means of an UV-light beam.

Process for providing marking on security papers

Substrate with transparent electrodes and devices incorporating it

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Epalinges, Switzerland

Patrik Hoffmann