Nxp B.v.

Patrick Van De Steeg

Jwalant Kumar Mishra

Pankaj Agarwal

Jainendra Singh

Rajat Kohli

Hendricus J M Veendrick

Harold G P Benten

Deepti Saini

Agnese A M Bargagli-Stoffi

Sushikha Jain

A voltage differential sense amplifier circuit for a semiconductor memory circuit is disclosed. The voltage differential sense amplifier circuit includes a first and second pluralities of transistors. A first bias control circuit is included to bias the first plurality of transistors. The first bias control circuit is connected to body terminals of the first plurality of transistors for providing a temperature dependent first bias voltage to control threshold voltages of the first plurality of transistors. The temperature defendant first bias voltage is generated based on junction leakages at the body terminals of the first plurality of transistors. A second bias control circuit is included to bias the second plurality of transistors. The second bias control circuit is connected to body terminals of the second plurality of transistors for providing a temperature dependent second bias voltage to control threshold voltages of the second plurality of transistors. The temperature dependent second bias voltage is generated based on junction leakages at the body terminals of the second plurality of transistors.

Temperature dependent voltage differential sense-amplifier

A semiconductor memory circuit includes a SRAM cell and a bias control circuit for biasing the SRAM cell. The SRAM cell includes pull-up, pull-down, and pass-gate transistors. The bias control circuit is connected to body terminals of the pull-down and pass-gate transistors for providing a bias voltage. The bias control circuit controls threshold voltages of the pull-down and pass-gate transistors by way of the bias voltage. The bias voltage, which is temperature dependent, is generated based on junction leakages at the body terminals of the pull-down and pass-gate transistors. The use of a temperature-dependent bias voltage to bias the body terminals of the pull-down and pass-gate transistors ensures that the write margin and the static noise margin (SNM) of the SRAM cell are relatively constant and above acceptable levels over a defined temperature range.

Transistor body bias control circuit for SRAM cells

A read-only memory (ROM) includes ROM cells and a bias control circuit for biasing the ROM cells. Each ROM cell includes a set of transistors. The bias control circuit is connected to body terminals of the transistors of each ROM cell to provide a bias voltage. The bias voltage, which is temperature-dependent, is generated based on junction leakages at the body terminals of the transistors. The bias control circuit controls threshold voltages of the transistors using the bias voltage. The use of a temperature-dependent bias voltage to bias the body terminals of the transistors allows for a relatively constant read margin for each ROM cell.

ROM cell with transistor body bias control circuit

A read-only memory (ROM) device includes memory cells, bit-line pairs, a virtual ground line, and a programmable metal track. The memory cells are arranged in an array of rows and columns. Each memory cell stores two bits of data. The virtual ground line is disposed vertically and shared by two adjacent columns. The programmable metal track connects a memory cell to the virtual ground line based on a value of the two bits of data stored in the memory cell.

Dual-bit ROM cell with virtual ground line and programmable metal track

Disclosed is a ROM memory including a first bitcell including a transistor to store two bits and first and second bit lines to read data stored in the bitcell, a second bitcell including a second transistor connected to the first transistor and sharing the first and second bit lines, and a virtual ground line adjacent the bit lines configured to ground the bitcells.

High density ROM cell with dual bit storage for high speed and low voltage

An apparatus includes a memory circuit and a word-line driver circuit. The memory circuit includes a plurality of rows of memory cells, each memory cell in a corresponding row having pass transistors connected to a shared word-line. The word-line driver circuit is configured and arranged to enable pass transistors of a first set of memory cells of the memory circuit by applying a first voltage to word-lines of the first set of memory cells, disable pass transistors of a second set of memory cells of the memory circuit by applying a second voltage to word-lines of the second set of memory cells, and mitigate leakage of pass transistors of a third set of memory cells of the memory circuit by applying a third voltage to word-lines of the third set of memory cells, wherein the third voltage is between the first and second voltages.

Mitigating leakage in memory circuits

Disclosed is a ROM memory device including a plurality of rows and columns of memory cells, each memory cell including a bit line pair and a transistor to store two bits of data therein, and a virtual ground line disposed between adjacent pairs of bit line pairs, wherein the bit line pair and virtual ground line are used to read data stored in the memory cells.

1T compact ROM cell with dual bit storage for high speed and low voltage

An integrated circuit has a matrix of rows and columns of cells (), each cell () comprising a first inverter () and a second inverter (). First columns have a bit-line (), the first inverter () and the second inverter () in each cell of the first columns being cross-coupled to each other and coupled to bit-line () of the associated first column. A further column is provided in the matrix with bit line fragments () that are mutually disconnected. Delays are monitored by coupling at least the first inverters () of cells in respective pairs of rows in series via the bit-line fragments and measuring a delay during signal propagation through the series connection, for example by incorporating the series of inverters in a ring oscillator.

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Oss, Netherlands

Patrick Van De Steeg