Ampleon Netherlands B.v.

Patrick Valk

Example embodiments relate to a field-effect transistors having improved layouts. One example field-effect transistor includes a semiconductor substrate on which at least one transistor cell array is arranged. Each transistor cell includes a first transistor cell unit. Each first transistor cell unit includes a plurality of gate fingers, a main gate finger segment, a plurality of drain fingers, and a main drain finger segment. Each first transistor cell unit also includes a main gate finger base connected to the main gate finger segment of the first transistor cell unit and extending from that main gate finger segment towards the main drain finger segment of that first transistor cell unit. Further, each first transistor cell unit includes a main drain finger base connected to the main drain finger segment of that first transistor cell and extending from that main drain finger segment towards that main gate finger segment.

Field-effect transistor having improved layout

At least one embodiment relates to a radio-frequency (RF) power amplifier system for amplifying a first RF signal. The RF power amplifier system includes a RF power amplifier being configured to amplify a second RF signal. The RF power amplifier system also includes a control loop for controlling a power level of the second RF signal. The control loop includes a RF output power determining unit for determining a power level of the amplified second RF signal. The control loop also includes a gain determining unit for determining an actual large signal gain based on the determined power level of the amplified second RF signal and a power level of the second RF signal. Further, the control loop includes an attenuator for attenuating the first RF signal and for providing the attenuated first RF signal to the RF power amplifier as the second RF signal.

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Nijmegen, Netherlands

Patrick Valk