Commissariat a L'energie Atomique

Other

Centre National De La Recherche Scientifique

Universite Paris Sud (paris Ii)

Patrick Soukiassian

Andrew Mayne

G&eacute;rald Dujardin

Vincent Derycke

Fabrice Charra

Christian Brylinski

Hanna Enriquez

Gérald Dujardin

Fabrice Semond

Matthieu Silly

Fabrice Amy

The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.

Photon-emission scanning tunneling microscopy

Monoatomic and monocrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer. According to the invention, a monocrystalline substrate () is formed in SiC terminated by an atomic plane of carbon according to a reconstruction c(2&#xd7;2) and at least one annealing is carried out, capable of transforming this atomic plane, which is a plane of dimers C&#x2261;C (4) of sp configuration, into a plane of dimers C&#x2014;C (8) of spconfiguration. Application to microelectronics, optics, optoelectronics, micromechanics and biomaterials.

Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer

A highly oxygen-sensitive silicon layer ( ) is formed on a substrate ( ) of, for example, SiC. The layer ( ) has a 4&times;3 surface structure. The silicon layer ( ) is deposited on a surface of the substrate ( ) in a substantially uniform manner. The highly oxygen-sensitive silicon layer of the present invention may be used, for example in microelectronics.

Silicon layer highly sensitive to oxygen and method for obtaining same

Atomic wires of great length and great stability are formed on the surface of a SiC substrate as straight chains of dimers of an element chosen from amongst SiC and C. In order to produce same, layers of the element are formed on the surface and the assembly is constructed by means of annealings of the surface provided with the layers. The resulting wires have application to nanoelectronics.

Very long and highly stable atomic wires, method for making these wires, application in nano-electronics

Growing community of inventors

Remey les Chevreuse, France

Patrick Soukiassian